m395t5160cz4-cd56/e66/f76 Samsung Semiconductor, Inc., m395t5160cz4-cd56/e66/f76 Datasheet - Page 4

• Manufacturer Part Number: m395t5160cz4-cd56/e66/f76
• Description: Ddr2 Fully Buffered Dimm
• Manufacturer: Samsung Semiconductor, Inc.

Table 2 : Performance range
Table 3 : Address Configuration
1.0 FEATURES
Table 1 : Ordering Information
Note :
1. “Z” of Part number(11th digit) stands for Lead-free products.
2. The last digit stands for AMB.
FBDIMM
DDR2 DRAM Speed
CL-tRCD-tRP
128Mx8(1Gb) based Module
256Mx4(1Gb) based Module
M395T5663CZ4-CD56/E66
M395T5663CZ4-CD51/E61
M395T5160CZ4-CD56/E66/F76
M395T5160CZ4-CD55/E65
M395T5160CZ4-CD51/E61
- 240pin fully buffered dual in-line memory module (FB-
- 3.2Gb/s, 4.0Gb/s, 4.8Gb/s link transfer rate
- 1.8V +/- 0.1V Power Supply for DRAM V
- 1.5V +0.075/-0.045V Power Supply for AMB V
- 3.3V +/- 0.3V Power Supply for V
- Buffer Interface with high-speed differential point-to-
- Channel error detection & reporting
- Channel fail over mode support
DIMM)
point Link at 1.5 volt
Part Number
Organization
F7(DDR2-800)
6-6-6
800
Density
2GB
4GB
DDSPD
Row Address
Organization
256M x 72
512M x 72
A0-A13
A0-A13
DD
E6(DDR2-667)
/V
DDQ
5-5-5
CC
667
128Mx8(K4T1G084QC) *18EA
256Mx4(K4T1G044QC) *36EA
Component Composition
4 of 28
Column Address
A0-A9, A11
A0-A9
D5(DDR2-533)
- Serial presence detect with EEPROM
- 8 Banks
- Posted CAS
- Programmable CAS Latency: 3, 4, 5, 6
- Programmable Additive Latency: 0, 1, 2, 3, 4, 5
- Automatic DDR2 DRAM bus and channel calibration
- MBIST and IBIST Test functions
- Hot add-on and Hot Remove Capability
- Transparent mode for DRAM test support
4-4-4
533
Number
of Rank
Bank Address
2
2
BA0-BA2
BA0-BA2
Mbps
Unit
CK
IDT A1.5
IDT A1.5
Intel D1
IDT C1
IDT C1
AMB
Rev. 1.52 April 2008
DDR2 SDRAM
Full Module
Spreader
Type of
Auto Precharge
Heat
A10
A10
30.35mm
Height