m366s3953mts-c1h Samsung Semiconductor, Inc., m366s3953mts-c1h Datasheet - Page 5

no-image

m366s3953mts-c1h

Manufacturer Part Number
m366s3953mts-c1h
Description
Pc133/pc100 Unbuffered Dimm
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
(Recommended operating condition unless otherwise noted, T
DC CHARACTERISTICS
M366S2953MTS
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noticed, input swing level is CMOS(V
Operating current
(One bank active)
Precharge standby cur-
rent in power-down mode
Precharge standby cur-
rent in non power-down
mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
Parameter
Symbol
I
I
I
I
CC2
I
CC2
CC3
I
CC3
I
I
CC2
CC3
CC2
CC3
I
I
I
I
CC1
CC4
CC5
CC6
NS
NS
PS
PS
N
N
P
P
Burst length = 1
t
I
CKE
CKE & CLK
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
CKE
CKE & CLK
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
I
Page burst
4banks Activated.
t
t
CKE
RC
O
O
CCD
RC
= 0 mA
= 0 mA
= 2CLKs
t
t
RC
RC
V
V
V
V
V
V
0.2V
IH
IH
IH
IH
(min)
(min)
IL
IL
(max), t
(min), CS
(min), CLK
(max), t
(min), CS
(min), CLK
V
V
IL
IL
Test Condition
A
IH
(max), t
(max), t
CC
CC
= 0 to 70 C)
/V
= 10ns
= 10ns
IL
V
V
=V
IH
V
IH
V
CC
CC
IL
IL
(min), t
(min), t
DDQ
(max), t
(max), t
=
=
/V
PC133/PC100 Unbuffered DIMM
SSQ
CC
CC
CC
CC
).
= 10ns
= 10ns
=
=
2000
2000
3040
-75
Version
REV. 0.0 Dec. 2001
-1H
480
160
160
130
800
560
112
95
80
1760
2880
1840
-1L
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Note
1
1
2

Related parts for m366s3953mts-c1h