m366s1623dt0 Samsung Semiconductor, Inc., m366s1623dt0 Datasheet - Page 5

• Manufacturer Part Number: m366s1623dt0
• Description: Pc100 Unbuffered Dimm
• Manufacturer: Samsung Semiconductor, Inc.

Notes :
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
M366S1623DT0
Operating current
(one Bank Active)
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noted, input swing level is CMOS(V
Parameter
Symbol
I
I
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC1
CC4
CC5
CC6
PS
NS
PS
NS
P
N
P
N
Burst length =1
t
I
CKE
CKE & CLK
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
CKE
CKE & CLK
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
I
Page burst
4Banks activated
t
t
CKE
RC
O
O
CCD
RC
= 0 mA
= 0 mA
= 2CLKs
t
t
RC
RC
V
V
V
V
V
V
0.2V
(min)
IL
IH
IH
IL
IH
IH
(min)
(max), t
(max), t
(min), CS
(min), CLK
(min), CS
(min), CLK
V
V
IL
IL
Test Condition
(max), t
(max), t
CC
CC
A
= 10ns
= 10ns
IH
= 0 to 70 C)
V
V
/V
V
V
IH
IH
CC
CC
IL
IL
IL
(min), t
(min), t
(max), t
(max), t
=V
=
=
DDQ
CC
CC
CC
CC
/V
= 10ns
= 10ns
SSQ
=
=
)
PC100 Unbuffered DIMM
1,080
1,240
800
-80
Version
1,200
760
240
400
240
960
-1H
Rev. 0.0 Jun. 1999
16
16
96
48
48
16
1,200
760
960
-1L
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
Note
1
1
2