ka1m0880b-ydtu Fairchild Semiconductor, ka1m0880b-ydtu Datasheet - Page 3

• Manufacturer Part Number: ka1m0880b-ydtu
• Description: Fairchild Power Switch Fps
• Manufacturer: Fairchild Semiconductor

Electrical Characteristics (SFET part)
(Ta=25 C unless otherwise specified)
Note:
Pulse test: Pulse width
S
Drain source breakdown voltage
Zero gate voltage drain current
Static drain source on resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rise time
Turn off delay time
Fall time
Total gate charge
(gate-source+gate-drain)
Gate source charge
Gate drain (Miller) charge
=
--- -
R
1
Parameter
300 S, duty cycle
(note)
(note)
2%
R
Symbol
BV
DS(ON)
t
Coss
t
I
Crss
Ciss
Qgd
d(on)
d(off)
Qgs
DSS
gfs
Qg
tr
tf
DSS
V
V
V
V
V
V
V
V
f=1MHz
V
(MOSFET switching
time are essentially
independent of
operating temperature)
V
V
switching time are
essentially independent of
operating temperature)
GS
DS
GS
DS
GS
GS
DS
GS
DD
GS
DS
=Max., Rating,
=0.8Max., Rating,
=15V, I
=0.5BV
=0V, I
=0V
=0V, T
=10V, I
=0V, V
=0.5BV
=10V, I
Condition
D
C
DS
D
D
D
DSS
=50 A
DSS
=125 C
=5.0A
=5.0A
=8.0A,
=25V,
, I
(MOSFET
D
=8.0A
Min.
800
1.5
-
-
-
-
-
-
-
-
-
-
-
-
-
2460
Typ.
210
150
KA1L0880B/KA1M0880B
1.2
2.5
64
95
60
20
70
-
-
-
-
-
Max.
200
200
450
150
150
1.5
50
90
-
-
-
-
-
-
-
Unit
pF
nS
nC
V
S
A
A
3