ka1m0965rydtu Fairchild Semiconductor, ka1m0965rydtu Datasheet - Page 3

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ka1m0965rydtu

Manufacturer Part Number
ka1m0965rydtu
Description
Fairchild Power Switch Fps
Manufacturer
Fairchild Semiconductor
Datasheet
Electrical Characteristics (SFET part)
(Ta=25 C unless otherwise specified)
Note:
1. Pulse test: Pulse width
2.
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Static Drain-Source on Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
Gate-Drain (Miller) Charge
S
=
--- -
R
1
300 S, duty cycle
(Note)
(Note)
2%
R
Symbol
BV
DS(ON)
t
Coss
t
I
Crss
Ciss
Qgd
d(on)
d(off)
Qgs
DSS
gfs
Qg
tr
DSS
tf
V
V
V
V
V
V
V
f=1MHz
V
(MOSFET switching
time are essentially
independent of
operating temperature)
V
V
switching time are essentially
independent of
operating temperature)
GS
DS
DS
GS
GS
DS
GS
DD
GS
DS
=Max., Rating, V
=0.8Max., Rating,
=15V, I
=0.5BV
=0V, I
=0V, T
=10V, I
=0V, V
=0.5BV
=10V, I
Condition
D
C
DS
D
D
D
=50 A
DSS
DSS
=125 C
=4.5A
=4.5A
=9.0A,
=25V,
, I
(MOSFET
D
=9.0A
GS
=0V
Min. Typ. Max. Unit
650
5.0
-
-
-
-
-
-
-
-
-
-
-
-
-
1750
0.96
35.4
190
78
20
23
85
30
74
12
-
-
-
-
200
180
1.2
50
50
55
70
75
KA1M0965R
-
-
-
-
-
-
-
nS
nC
pF
V
S
A
A
3

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