apm8001k Anpec Electronics Corporation, apm8001k Datasheet - Page 2

• Manufacturer Part Number: apm8001k
• Description: Dual N-channel Enhancement Mode Mosfet
• Manufacturer: Anpec Electronics Corporation

APM8001K
Absolute Maximum Ratings
Electrical Characteristics
Copyright
Rev. A.1 - Apr., 2009
Note：*Surface Mounted on 1in
Static Characteristics
Diode Characteristics
Symbol
R
Symbol
BV
V
DS(ON)
R
V
V
V
I
T
I
I
I
P
E
SM
GS(th)
Q
DSS
GSS
I
DM
I
T
t
SD
DSS
GSS
STG
D
S
rr
D
AS
DSS
JA
rr
J
*
*
**
**Pulse test; pulse width
*
*
a
*
a
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-State Resistance V
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ANPEC Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Diode Continuous Forward Current
Pulse Source Current
Maximum Junction Temperature
Storage Temperature Range
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Energy, L=0.1mH
Parameter
2
pad area, t
300 s, duty cycle
Parameter
10 sec.
(T
A
V
V
V
V
I
I
2%.
SD
SD
(T
= 25 C Unless Otherwise Noted)
GS
DS
DS
GS
GS
=2.5A, V
=2.5A, dI
=64V, V
=V
A
=0V, I
=±25V, V
=10V, I
2
Test Conditions
= 25 C Unless Otherwise Noted)
GS
, I
V
T
T
DS
DS
A
A
GS
DS
GS
=25°C
=100°C
=250 A
GS
SD
=250 A
=10V
=4.1A
DS
=0V
=0V
/dt=100A/ s
=0V
T
J
=85°C
Min.
2.5
80
-
-
-
-
-
-
-
APM8001K
-55 to 150
Rating
Typ.
62.5
16.3
0.75
±25
150
4.1
2.5
0.8
3.5
80
18
20
55
36
30
2
-
-
-
-
www.anpec.com.tw
Max.
±100
4.5
1.1
30
72
1
-
-
-
°C/W
Unit
Unit
mJ
m
°C
W
nC
nA
ns
V
A
V
V
V
A