bss63r GUANGDONG KEXIN INDUSTRIAL CO.,LTD, bss63r Datasheet

no-image

bss63r

Manufacturer Part Number
bss63r
Description
High Voltage Transistor
Manufacturer
GUANGDONG KEXIN INDUSTRIAL CO.,LTD
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSS63R
Manufacturer:
NXP/恩智浦
Quantity:
20 000
SMD Type
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector-base cut-off current
Emitter-base current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Transitional frequency
Output capacitance
* Pulse test: tp = 300 ìs; d
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
Power dissipation
Operating and storage temperature range
Features
Marking
Electrical Characteristics Ta = 25
Absolute Maximum Ratings Ta = 25
SOT23 PNP silicon planar
Marking
Parameter
Parameter
T6
0.02.
High Voltage Transistor
V
V
V
V
V
Symbol
(BR)CBO
(BR)CEO
(BR)EBO
CE(
BE(
C
I
I
h
CBO
EBO
f
obo
FE
Symbol
T
sat) I
sat) I
T
V
V
V
BSS63R
P
j,
CBO
CEO
EBO
I
T
C
tot
stg
I
I
I
V
V
V
I
I
I
V
C
C
E
C
C
C
C
C
CB
CB
EB
CB
=-10ìA
=-100ìA
=-10ìA
=-25mA, I
=-25mA, I
=-10mA,V
=-25mA,V
=25mA, V
=-6V
=-90V
=-90V,Ta = 150
=-10V, f=1MHz
-55 to +150
Rating
B
B
CE
CE
CE
-110
-100
-100
Testconditons
=-2.5mA
=-2.5mA
330
-6
=-5V, f=35MHz
=-1V
=-1V
mW
Unit
mA
V
V
V
1
0.95
SOT-23
3
+0.1
-0.1
2.9
0.4
1.9
-110
-100
Min
-0.1
+0.1
-0.1
+0.1
-0.1
+0.1
30
30
50
-6
www.kexin.com.cn
Transistors
2
Typ
85
3
-100
-200
-250
-900
Max
-50
1.Base
2.Emitter
3.collector
Unit: mm
MHz
0.1
Unit
nA
ìA
nA
pF
V
V
V
V
V
+0.05
-0.01
1

Related parts for bss63r

Related keywords