dmp3010lps Diodes, Inc., dmp3010lps Datasheet - Page 4

• Manufacturer Part Number: dmp3010lps
• Description: P-channel Enhancement Mode Mosfet
• Manufacturer: Diodes, Inc.

DMP3010LPS
Document number: DS32239 Rev. 4 - 2
10,000
1,000
2.5
2.0
1.5
1.0
0.5
10
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
100
0
8
6
4
2
0
-50 -25
0
Fig. 11 Gate-Source Voltage vs. Total Gate Charge
0
20
f = 1MHz
V
T , AMBIENT TEMPERATURE (°C)
I = -10A
DS
D
A
-V , DRAIN-SOURCE VOLTAGE (V)
Q , OTAL GATE CHARGE (nC)
= -15V
g
DS
Fig. 9 Typical Total Capacitance
0
4
T
40
25
60
8
50
I = -250µA
D
80
C
75
C
C
rss
12
oss
iss
I = -1mA
100
D
100
16
120
125 150
140
20
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100,000
10,000
1,000
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
30
25
20
15
10
100
5
0
10
0
1
0
Fig. 8 Diode Forward Voltage vs. Current
0.2
-V , SOURCE-DRAIN VOLTAGE (V)
-V , DRAIN-SOURCE VOLTAGE (V)
SD
5
DS
0.4
10
T = 25°C
A
0.6
15
0.8
20
1.0
DMP3010LPS
T = 125°C
T = 150°C
T = 85°C
A
A
A
T = 25°C
A
1.2
25
© Diodes Incorporated
February 2011
1.4
30