dmp3130l Diodes, Inc., dmp3130l Datasheet - Page 2

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dmp3130l

Manufacturer Part Number
dmp3130l
Description
P-channel Enhancement Mode Mosfet
Manufacturer
Diodes, Inc.
Datasheet

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Electrical Characteristics
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
SWITCHING CHARACTERISTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Notes:
DMP3130L
Document number: DS31524 Rev. 2 - 2
4. Short duration pulse test used to minimize self-heating effect.
10
8
6
4
2
0
0
0.5
Characteristic
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DS
1
V
GS
1.5
V
GS
= -3.0V
V
GS
= -4.5V
= -10V
2
2.5
@T
3
A
V
= 25°C unless otherwise specified
V
V
3.5
GS
GS
GS
= -1.5V
= -2.5V
= -2.0V
4
Symbol
R
BV
V
DS (ON)
t
t
I
I
C
Q
Q
V
C
GS(th)
C
Q
d(on)
d(off)
DSS
GSS
R
g
4.5
oss
t
t
SD
rss
GS
GD
DSS
iss
fs
r
f
G
G
5
www.diodes.com
Min
-0.6
-30
2 of 5
4.04
27.8
15.0
Typ
115
432
0.8
5.9
1.0
3.1
4.6
6.5
59
73
87
62
12
8
8
6
4
2
0
±100
-1.25
Max
0.5
-1.3
150
77
95
-1
T = 150°C
A
V
Fig. 2 Typical Transfer Characteristics
DS
-V
T = 85°C
= -5V
1
Unit
A
GS
μA
nA
nC
pF
pF
pF
ns
Ω
V
V
S
V
, GATE SOURCE VOLTAGE (V)
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
f = 1.0MHz
V
V
V
V
I
V
D
1.5
GS
DS
GS
DS
GS
GS
DS
GS
DS
DS
DS
DS
DS
DS
GS
= -1A, R
= 0V, I
= -30V, V
= ±12V, V
= V
= -10V, I
= -2.5V, I
= -5V, I
= 0V, I
= -15V, V
= 0V, V
= -15V, V
= -15V, V
= -15V, V
= -15V, V
= -4.5V, I
GS
T = 25°C
A
T = -55°C
, I
G
A
D
S
2
D
GS
D
Test Condition
= 6.0Ω
= -250μA
= -3.0A
D
= -4A
GS
D
GS
GS
GS
GS
GS
= -250μA
D
DS
= -4.2A
= 0V
= -3A
= -4A
= 0V
= 0V
= -4.5V, I
= -10V, I
= -4.5V, I
= -10V,
= 0V
2.5
DMP3130L
© Diodes Incorporated
D
D
D
February 2009
= -4.0A
= -4.0A
= -4.0A
3

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