tfp5n60 Tak Cheong Electronics (Holdings) Co.,Ltd, tfp5n60 Datasheet

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tfp5n60

Manufacturer Part Number
tfp5n60
Description
N-channel Power Mosfet 4.5a, 600v, 2.4
Manufacturer
Tak Cheong Electronics (Holdings) Co.,Ltd
Datasheet
N-Channel Power MOSFET
4.5A, 600V, 2.4Ω
General Description
Features
ABSOLUTE MAXIMUM RATINGS
Notes:
1. L=20mH, I
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
THERMAL CHARACTERISTICS
Number: DB-185
November 2009, Revision A
Symbol
R
R
The N-Channel MOSFET is used an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over time. This advanced
technology has been especially tailored to minimize on-state
resistance, provide superior switching performance. This
device is well suited for high efficiency switched mode power
suppliers, active power factor correction, electronic lamp
ballasts based half bridge topology.
Symbol
θJC
θJA
V GSS
V DSS
E AR
E AS
T stg
I DM
Robust high voltage termination
Avalanche energy specified
Diode is characterized for use in bridge circuits
Source to Drain diode recovery time comparable to a
discrete fast recovery diode.
P D
T J
I D
AS
=4.5A, V
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
TAK CHEONG
Operating Junction Temperature
Storage Temperature Range
Drain- Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
Power Dissipation
Derating factor above 25℃
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
DD
=50V, R
G
=50Ω, Starting T
Parameter
Parameter
(
T
C
=25°C
®
J
, unless otherwise
=25℃
(Note 2)
(Note 2)
(Note 1)
noted
)
DEVICE MARKING DESIGNATION:
Line 1 = TC Brand
Line 2 = Device Type
1
2
- 55 to +150
3
Value
Value
±30
600
1.26
62.5
100
216
150
4.5
0.8
18
10
P re lim in ary Dat a S he et
G
TO-220AB
D
S
1 = Gate
2 = Drain
3 = Source
Units
W/℃
℃/W
℃/W
Unit
mJ
mJ
W
V
V
A
A
Page 1

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tfp5n60 Summary of contents

Page 1

TAK CHEONG N-Channel Power MOSFET 4.5A, 600V, 2.4Ω General Description The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced technology has been especially tailored to minimize on-state resistance, ...

Page 2

TAK CHEONG ELECTRICAL CHARACTERISTICS Off Characteristics (T = 25°C unless otherwise noted) A Symbol Parameter BV Drain-Sounce Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body Leakage Current, Forward GSSF I Gate-Body Leakage Current, Reverse GSSR On ...

Page 3

TAK CHEONG TO220AB PACKAGE OUTLINE Number: DB-185 November 2009, Revision A ® MILLIMETERS DIM MIN A 3.6 A1 1.2 A2 2.0 b 0.4 b2 1.2 c 0.36 D 14.2 e 2.34 E 9.7 H1 5.8 L 12.7 L1 2.7 ØP ...

Page 4

TAK CHEONG The information presented in this document is for reference only. Tak Cheong reserves the right to make changes without notice for the specification of the products displayed herein. The product listed herein is designed to be used with ...

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