k4m64163pk Samsung Semiconductor, Inc., k4m64163pk Datasheet - Page 5

• Manufacturer Part Number: k4m64163pk
• Description: 1m X 16bit X 4 Banks Mobile Sdram In 54fbga
• Manufacturer: Samsung Semiconductor, Inc.

DC CHARACTERISTICS
K4M64163PK - R(B)E/G/C/F
Recommended operating conditions(Voltage referenced to V
NOTES:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. It has +/-5 °C tolerance.
4. K4M64163PK-R(B)E/C**
5. K4M64163PK-R(B)G/F**
6. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
Operating Current
(One Bank Active)
Precharge Standby Current in
power-down mode
Precharge Standby Current
in non power-down mode
Active Standby Current
in power-down mode
Active Standby Current
in non power-down mode
(One Bank Active)
Operating Current
(Burst Mode)
Refresh Current
Self Refresh Current
Parameter
Symbol
I
I
I
I
CC2
I
CC2
CC3
I
CC3
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC
CC
CC
CC1
NS
NS
PS CKE & CLK ≤ V
PS CKE & CLK ≤ V
4
5
6
N
N
P
P
CKE ≤ V
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
CKE ≤ V
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
t
CKE ≤ 0.2V
t
I
Page burst
4Banks Activated
t
ARFC
Burst length = 1
I
RC
O
CCD
O
= 0 mA
= 0 mA
≥ t
= 2CLKs
≥ t
RC
ARFC
IL
IH
IH
IL
IH
IH
(min)
(max), t
(max), t
(min), CS ≥ V
(min), CLK ≤ V
(min), CS ≥ V
(min), CLK ≤ V
(min)
IL
IL
Test Condition
(max), t
(max), t
CC
CC
SS
= 10ns
= 10ns
= 0V, T
IH
IH
CC
CC
IL
IL
(min), t
(min), t
(max), t
(max), t
5
= ∞
= ∞
A
= -25°C ~ 85°C for Extended, -25°C ~ 70°C for Commercial)
-E/C
-G/F
CC
CC
CC
CC
= 10ns
= 10ns
TCSR
= ∞
= ∞
1/2 of
1/4 of
1/2 of
1/4 of
Full
Full
-75
30
50
50
45
140
130
125
90
80
75
*3
Version
Mobile-SDRAM
-90
0.3
0.3
6.5
12
30
45
50
1
5
2
4
85/70
220
190
175
180
150
135
-1L
30
45
50
October 2005
Unit
mA
mA
mA
mA
mA
mA
mA
mA
uA
°C
Note
1
1
2
4
5