k4m64163lk Samsung Semiconductor, Inc., k4m64163lk Datasheet - Page 5

• Manufacturer Part Number: k4m64163lk
• Description: 1m X 16bit X 4 Banks Mobile Sdram In 54fbga
• Manufacturer: Samsung Semiconductor, Inc.

DC CHARACTERISTICS
K4M64163LK - R(B)N/G/L/F
Recommended operating conditions (Voltage referenced to V
NOTES:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Internal TCSR can be supported.
4. K4M64163LK-R(B)G/F**
5. It has +/-5 °C tolerance.
6. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
Operating Current
(One Bank Active)
Precharge Standby Current in
power-down mode
Precharge Standby Current
in non power-down mode
Active Standby Current
in power-down mode
Active Standby Current
in non power-down mode
(One Bank Active)
Operating Current
(Burst Mode)
Refresh Current
Self Refresh Current
In commercial Temp : Max 45°C/Max 70°C, In extended Temp : Max 45°C/Max 85°C
Parameter
Symbol
I
I
I
I
CC2
I
CC2
CC3
I
CC3
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC
CC
CC
CC1
NS
NS
PS CKE & CLK ≤ V
PS CKE & CLK ≤ V
4
5
6
N
N
P
P
CKE ≤ V
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
CKE ≤ V
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
t
CKE ≤ 0.2V
t
I
Page burst
4Banks Activated
t
RC
Burst length = 1
I
RC
O
CCD
O
= 0 mA
= 0 mA
≥ t
≥ t
= 2CLKs
RC
RC
IL
IH
IH
IL
IH
IH
(min)
(min)
(max), t
(max), t
(min), CS ≥ V
(min), CLK ≤ V
(min), CS ≥ V
(min), CLK ≤ V
IL
IL
Test Condition
(max), t
(max), t
CC
CC
SS
= 10ns
= 10ns
-G/F
= 0V, T
IH
IH
CC
CC
IL
IL
(min), t
(min), t
(max), t
(max), t
5
= ∞
= ∞
A
= -25 to 85°C for Extended, -25 to 70°C for Commercial)
1/2 of Full Array
1/4 of Full Array
Internal TCSR
CC
CC
-N/L
Full Array
CC
CC
= 10ns
= 10ns
= ∞
= ∞
115
-75
50
80
45
180
140
120
*5
Version
Mobile-SDRAM
-1H
300
110
0.5
0.5
50
10
20
20
65
7
5
5
85/70
300
220
180
100
-1L
45
65
January 2006
Unit
mA
mA
mA
mA
mA
mA
mA
mA
uA
°C
uA
Note
1
1
2
3
4