k4m64163ph Samsung Semiconductor, Inc., k4m64163ph Datasheet - Page 5

• Manufacturer Part Number: k4m64163ph
• Description: 1m X 16bit X 4 Banks Mobile Sdram In 54csp
• Manufacturer: Samsung Semiconductor, Inc.

DC CHARACTERISTICS
K4M64163PH - R(B)G/F
Recommended operating conditions(Voltage referenced to V
NOTES:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
Operating Current
(One Bank Active)
Precharge Standby Current in
power-down mode
Precharge Standby Current
in non power-down mode
Active Standby Current
in power-down mode
Active Standby Current
in non power-down mode
(One Bank Active)
Operating Current
(Burst Mode)
Refresh Current
Self Refresh Current
Parameter
Symbol
I
I
I
I
CC2
CC3
I
CC2
I
I
CC3
I
CC2
CC2
CC3
CC3
I
I
I
I
CC1
CC
CC
CC
PS CKE & CLK dV
NS
PS CKE & CLK dV
NS
4
5
6
N
N
P
P
CKE dV
CKE tV
Input signals are changed one time during 20ns
CKE tV
Input signals are stable
CKE dV
CKE tV
Input signals are changed one time during 20ns
CKE tV
Input signals are stable
t
CKE d0.2V
Burst length = 1
t
I
I
Page burst
4Banks Activated
t
ARFC
RC
O
CCD
O
= 0 mA
= 0 mA
tt
= 2CLKs
tt
RC
ARFC
IL
IH
IH
IL
IH
IH
(min)
(max), t
(max), t
(min), CS tV
(min), CLK dV
(min), CS tV
(min), CLK dV
(min)
IL
IL
Test Condition
(max), t
(max), t
CC
CC
SS
= 10ns
= 10ns
= 0V, T
IH
IH
CC
CC
IL
IL
(min), t
(min), t
(max), t
(max), t
5
= f
= f
A
= -25qC ~ 85qC for Extended, -25qC ~ 70qC for Commerial)
1/2 of Full Array
1/4 of Full Array
Internal TCSR
CC
CC
CC
CC
Full Array
= 10ns
= 10ns
= f
= f
-75
Max 40
25
60
50
90
80
75
Version
Mobile-SDRAM
-90
0.3
0.3
6.5
25
12
50
50
1
5
1
1
Max 85
180
160
150
-IL
25
50
50
December 2003
Unit
mA
mA
mA
mA
mA
mA
mA
mA
qC
uA
Note
1
1
2