k4m511533e Samsung Semiconductor, Inc., k4m511533e Datasheet - Page 10

• Manufacturer Part Number: k4m511533e
• Description: Mobile-sdram
• Manufacturer: Samsung Semiconductor, Inc.

K4M511533E - Y(P)C/L/F
A. MODE REGISTER FIELD TABLE TO PROGRAM MODES
Register Programmed with Normal MRS
Normal MRS Mode
Register Programmed with Extended MRS
EMRS for PASR(Partial Array Self Ref.) & DS(Driver Strength)
NOTES:
1. RFU(Reserved for future use) should stay "0" during MRS cycle.
2. If A9 is high during MRS cycle, "Burst Read Single Bit Write" function will be enabled.
Function
Function
A8
A9
Address
0
0
1
1
0
1
Address
BA1
A12~A10/AP
0
0
1
1
Write Burst Length
A7
0
1
0
1
0
Test Mode
BA0
Mode Register Set
0
1
0
1
BA1
"0" Setting for Normal
Single Bit
Mode Select
Length
Burst
Reserved
Reserved
Reserved
Mode Select
BA0 ~ BA1
Type
EMRS for Mobile SDRAM
MRS
BA0
A9
0
Normal MRS
Reserved
Reserved
A12 ~ A10/AP
Mode
Reserved Address
A6
0
0
0
0
1
1
1
1
A8
0
A5
A12 ~ A10/AP
0
0
1
1
0
0
1
1
CAS Latency
RFU
A4
0
1
0
1
0
1
0
1
RFU
A7
*1
0
A9
A6
*1
0
0
1
1
Reserved
Reserved
Reserved
Reserved
Reserved
Latency
1
2
3
A8
Driver Strength
A5
0
1
0
1
W.B.L
A9
A4
0
*2
BA1 BA0
Driver Strength
A3
0
1
0
A7
Reserved
Reserved
Test Mode
Mode Select
A8
Burst Type
Full
1/2
0
Sequential
Interleave
A6
A3
0
Type
A7
mal MRS
for Nor-
Setting
DS
Mode
A5
A6
A2
0
0
0
0
1
1
1
1
CAS Latency
A2
0
0
0
0
1
1
1
1
A1
A5
0
0
1
1
0
0
1
1
A4
RFU
A1
0
0
1
1
0
0
1
1
A0
0
1
0
1
0
1
0
1
A4
Full Page Length x16 : 512Mb(1024)
*1
A3
Mobile-SDRAM
A0
Burst Length
0
1
0
1
0
1
0
1
Size of Refreshed Array
PASR
A3
BT
1/2 of Full Array
1/4 of Full Array
Reserved
Reserved
Reserved
Full Page
A2
BT=0
Full Array
Reserved
Reserved
Reserved
Reserved
Reserved
A2
1
2
4
8
Burst Length
PASR
February 2004
A1
A1
Reserved
Reserved
Reserved
Reserved
BT=1
1
2
4
8
A0
A0