hsd278 Renesas Electronics Corporation., hsd278 Datasheet - Page 4

• Manufacturer Part Number: hsd278
• Description: Silicon Schottky Barrier Diode For Detector
• Manufacturer: Renesas Electronics Corporation.

Absolute Maximum Ratings
Repetitive peak reverse voltage
Reverse voltage
Non-Repetitive peak forward surge current
Peak forward current
Average rectified current
Junction temperature
Storage temperature
Note: 10 ms sine wave 1 pulse
Electrical Characteristics
Forward voltage
Reverse current
Capacitance
ESD-Capability *
Notes: 1. Failure criterion ; I
Rev.2.00 Apr 15, 2005 page 2 of 4
2. Please do not use the soldering iron due to avoid high stress to the SFP package.
Item
1
Item
V
V
I
C
—
Symbol
R
F1
F2
R
≥ 1.4 µA at V
Min
100
—
—
—
—
R
V
V
I
I
I
Tj
Tstg
= 10 V
FSM
FM
O
RRM
R
Typ
*
—
—
—
—
—
Symbol
Max
0.30
0.95
700
1.5
—
Unit
nA
pF
V
V
−55 to +125
Value
I
I
V
V
C = 200 pF, R
reverse direction 1 pulse.
200
150
125
F
F
30
30
30
R
R
= 1 mA
= 30 mA
= 10 V
= 1 V, f = 1 MHz
Test Condition
L
= 0 Ω, Both forward and
Unit
mA
mA
mA
°C
°C
V
V
(Ta = 25°C)
(Ta = 25°C)