hsd2118j Hi-Sincerity Microelectronics Corp., hsd2118j Datasheet

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hsd2118j

Manufacturer Part Number
hsd2118j
Description
Low Vce Sat Transistor
Manufacturer
Hi-Sincerity Microelectronics Corp.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
hsd2118j-E
Manufacturer:
華昕电子
Quantity:
20 000
HSD2118J
LOW V
Feature
Structure
Epitaxial Planar Type NPN Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
Classification of hFE
HSD2118J
Low V
Excellent DC Current Gain Characteristic
Complements the HSB1386J
Maximum Temperatures
Maximum Power Dissipation
Maximum Voltages and Currents (T
Storage Temperature ........................................................................................................................... -55 ~ +150 C
Junction Temperature ..................................................................................................................... 150 C Maximum
Total Power Dissipation (T
Total Power Dissipation (T
V
V
V
I
I
C
C
CBO
CEO
EBO
Collector Current ............................................................................................................................................... 5 A
Collector Current (Pulse) .................................................................................................................................. 10 A
*V
Symbol
Emitter to Base Voltage ................................................................................................................................ 6 V
Range
Collector to Base Voltage ........................................................................................................................... 50 V
Collector to Emitter Voltage ........................................................................................................................ 20 V
BV
BV
BV
Rank
*hFE
CE(sat)
Cob
I
I
CE(sat)
CE(sat)
CBO
EBO
fT
CBO
CEO
EBO
, V
1
TRANSISTOR (20V, 5A)
CE(sat)
=0.6V(Typ.)(I
HI-SINCERITY
MICROELECTRONICS CORP.
Min.
180
50
20
6
-
-
-
-
-
A
C
180-390
=25 C) ...................................................................................................................... 1 W
=25 C) .................................................................................................................... 10 W
R
C
=4A/I
Typ.
150
0.6
A
30
=25 C)
-
-
-
-
-
-
(T
B
=0.1A)
A
=25 C)
(T
A
=25 C)
Max.
620
0.5
0.5
1
-
-
-
-
-
370-620
E
MHz
Unit
uA
uA
pF
V
V
V
V
I
I
I
V
V
I
V
V
V
C
C
E
C
CB
EB
CE
CE
CE
=50uA
=1mA
=50uA
/I
B
=40V
=5V
=2V, I
=6V, I
=20V, I
=4A/0.1A
*Pulse Test: Pulse Width 380us, Duty Cycle 2%
C
E
=-50mA, f=100MHz
=0.5A
E
=0A, f=1MHz
Test Conditions
Spec. No. : HJ200205
Issued Date : 2002.04.01
Revised Date : 2005.07.14
Page No. : 1/5
HSMC Product Specification
TO-252

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hsd2118j Summary of contents

Page 1

... I Collector Current (Pulse) .................................................................................................................................. Electrical Characteristics Symbol Min CBO BV 20 CEO BV 6 EBO I - CBO I - EBO * CE(sat) *hFE 180 fT - Cob - Classification of hFE Rank R Range 180-390 HSD2118J =4A/I =0. Typ. Max. Unit - - 0 0 620 150 ...

Page 2

... B 100 125 100 Collector Current-I Capcitance & Reverse-Biased Voltage 1000 100 Cob 10 1 0.1 1 Reverse Biased Voltage (V) HSD2118J 1000 o 125 C 100 1000 10000 (mA) C 10000 1000 100 1000 10000 (mA 100 Spec. No. : HJ200205 Issued Date : 2002.04.01 Revised Date : 2005 ...

Page 3

... HI-SINCERITY MICROELECTRONICS CORP. Safe Operating Area 10 PT=100mS PT=1mS PT= Forward Voltage-V HSD2118J 100 (V) CE Spec. No. : HJ200205 Issued Date : 2002.04.01 Revised Date : 2005.07.14 Page No. : 3/5 HSMC Product Specification ...

Page 4

... Head Office And Factory: Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HSD2118J Marking Free Mark Pb-Free: " ...

Page 5

... L Peak Temperature ( Time within actual Peak Temperature ( Ramp-down Rate o Time Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. HSD2118J o o C~35 C Humidity=65%±15% Ramp- Preheat Ramp-down Peak Time Sn-Pb Eutectic Assembly o ) <3 C/sec ...

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