sdn520c SeCoS Halbleitertechnologie GmbH, sdn520c Datasheet - Page 2

• Manufacturer Part Number: sdn520c
• Description: N-ch 4.5 A, 20 V, Rds On 58 M? ?? ? P-ch -4.5 A, -20 V, Rds On 112 M? ?? ? N & P-channel Enhancement Mode Mosfet
• Manufacturer: SeCoS Halbleitertechnologie GmbH

http://www.SeCoSGmbH.com/
4-Jul-2011 Rev. A
ELECTRICAL CHARACTERISTICS
Gate-Threshold Voltage
Gate-Body Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Notes:
1. Pulse test: PW <= 300us duty cycle <= 2%.
2. Guaranteed by design, not subject to production testing.
Elektronische Bauelemente
Parameter
1
1
1
1
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Symbol
(T
R
V
T
T
I
I
I
DS(ON)
V
Q
Q
D(on)
A
GS(th)
GSS
DSS
g
Q
d(on)
d(off)
T
T
SD
fs
gs
gd
= 25°C unless otherwise specified)
r
g
f
Min.
Dynamic
-1
-5
1
5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-0.83
0.80
7.5
3.8
0.6
0.6
1.0
1.5
10
12
15
13
20
20
5
5
5
7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
N & P-Channel Enhancement Mode MOSFET
2
Max.
P-Ch: -4.5 A, -20 V, R
-100
100
172
112
-10
N-Ch: 4.5 A, 20 V, R
10
58
82
-1
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
m
nC
nS
uA
uA
V
A
S
S
SDN520C
Any changes of specification will not be informed individually.
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
I
I
N-Channel
V
I
P-Channel
V
I
N-Channel
V
V
P-Channel
V
V
S
S
D
D
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
GS
GS
GS
GS
DS
DS
DS
DS
DD
GS
DD
GS
= 1.05A, V
= -1.05A, V
= 2.7A
= -3.1A
=V
=V
= 0 , V
= 0 , V
=16 V, V
=-16V, V
=16V, V
= -16V, V
=4.5V, I
=-4.5V, I
=2.5V, I
=-2.5V, I
= 5V, I
= -5V, I
=15V, V
= -15V, V
= 15V, R
= 4.5V, I
= -15V, R
= -4.5V, I
= 5V, V
= -5V, V
GS
GS
Test Conditions
DS(ON)
DS(ON)
, I
, I
D
GS
GS
D
D
D
GS
= 1A
D
D
GS
GS
=250uA
= -250uA
= 11A
GS
D
D
D
GS
GS
GS
= 8 V
= -8 V
GEN
= 1A
= A
D
GS
GS
GS
= 1A
GEN
=4.5 V
= 1A
= -1A
=0 , T
= 4.5V,
= -1A
=0
= -4.5 V
=0
= 0
58 mΩ Ω Ω Ω
=0 , T
= -4.5V,
112 mΩ Ω Ω Ω
= 0
= 15 ,
= 15
J
=55℃
J
=55℃
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