cedm8001 Central Semiconductor Corp., cedm8001 Datasheet

cedm8001

Manufacturer Part Number

cedm8001

Description

Surface Mount P-channel Enhancement-mode Silicon Mosfet

Manufacturer

Central Semiconductor Corp.

Datasheet

1.CEDM8001.pdf (2 pages)

Current page: 1 of 2
Download datasheet (171Kb)

APPLICATIONS:

• Load/Power Switches

• Power Supply Converter Circuits

• Battery Powered Portable Equipment

MAXIMUM RATINGS: (T A =25°C)

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Steady State)

Continuous Drain Current

Power Dissipation

Operating and Storage Junction Temperature

ELECTRICAL CHARACTERISTICS: (T A =25°C unless otherwise noted)

SYMBOL

I GSSF

I GSSR

I DSS

BV DSS

V GS(th)

r DS(ON)

g fs

C rss

C iss

C oss

t on

t off

ENHANCEMENT-MODE

Top View

SURFACE MOUNT

SILICON MOSFET

SOT-883L CASE

P-CHANNEL

CEDM8001

TEST CONDITIONS

V GS =10V, V DS =0V

V DS =20V, V GS =0V

V GS =0V, I D =100μA

V DS =V GS , I D =250μA

V GS =4.0V, I D =10mA

V GS =2.5V, I D =10mA

V GS =1.5V, I D =1.0mA

V DS =10V, I D =100mA

V DS =3.0V, V GS =0, f=1.0MHz

V DD =3.0V, V GS =2.5V, I D =10mA

Bottom View

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CEDM8001 is an

Enhancement-mode P-Channel Field Effect Transistor,

manufactured by the P-Channel DMOS Process, designed

for high speed pulsed amplifier and driver applications.

This MOSFET offers Low r DS(on) and Low Theshold Voltage.

MARKING CODE:

FEATURES:

• Power Dissipation 100mW

• Low Package Profile, 0.4mm

• Low r DS(on)

• Low Threshold Voltage

• Logic Level Compatible

• Small, TLP™ 1x0.6mm, SOT-883L Leadless

Surface Mount Package

SYMBOL

Central

Semiconductor Corp.

T J , T stg

V DS

V GS

MIN

100

P D

0.6

I D

TYP

-65 to +150

100

200

100

MAX

1.0

1.1

R3 (29-February 2008)

UNITS

μA

°C

Related parts for cedm8001

cedm8001 Summary of contents

Page 1

... V DD =3.0V =2.5V =10mA Central Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM8001 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low r DS(on) and Low Theshold Voltage. ...

Page 2

... Central TM Semiconductor Corp. SOT-883L - MECHANICAL OUTLINE CEDM8001 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET LEAD CODE: 1) GATE 2) SOURCE 3) DRAIN R3 (29-February 2008) ...

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