cedm8001 Central Semiconductor Corp., cedm8001 Datasheet
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cedm8001
Manufacturer Part Number
cedm8001
Description
Surface Mount P-channel Enhancement-mode Silicon Mosfet
Manufacturer
Central Semiconductor Corp.
Datasheet
1.CEDM8001.pdf
(2 pages)
APPLICATIONS:
• Load/Power Switches
• Power Supply Converter Circuits
• Battery Powered Portable Equipment
MAXIMUM RATINGS: (T A =25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Continuous Drain Current
Power Dissipation
Operating and Storage Junction Temperature
ELECTRICAL CHARACTERISTICS: (T A =25°C unless otherwise noted)
SYMBOL
I GSSF
I GSSR
I DSS
BV DSS
V GS(th)
r DS(ON)
r DS(ON)
r DS(ON)
g fs
C rss
C iss
C oss
t on
t off
ENHANCEMENT-MODE
Top View
SURFACE MOUNT
SILICON MOSFET
SOT-883L CASE
P-CHANNEL
CEDM8001
TEST CONDITIONS
V GS =10V, V DS =0V
V GS =10V, V DS =0V
V DS =20V, V GS =0V
V GS =0V, I D =100μA
V DS =V GS , I D =250μA
V GS =4.0V, I D =10mA
V GS =2.5V, I D =10mA
V GS =1.5V, I D =1.0mA
V DS =10V, I D =100mA
V DS =3.0V, V GS =0, f=1.0MHz
V DS =3.0V, V GS =0, f=1.0MHz
V DS =3.0V, V GS =0, f=1.0MHz
V DD =3.0V, V GS =2.5V, I D =10mA
V DD =3.0V, V GS =2.5V, I D =10mA
Bottom View
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CEDM8001 is an
Enhancement-mode P-Channel Field Effect Transistor,
manufactured by the P-Channel DMOS Process, designed
for high speed pulsed amplifier and driver applications.
This MOSFET offers Low r DS(on) and Low Theshold Voltage.
MARKING CODE:
FEATURES:
• Power Dissipation 100mW
• Low Package Profile, 0.4mm
• Low r DS(on)
• Low Threshold Voltage
• Logic Level Compatible
• Small, TLP™ 1x0.6mm, SOT-883L Leadless
Surface Mount Package
SYMBOL
Central
Semiconductor Corp.
T J , T stg
V DS
V GS
MIN
100
P D
0.6
I D
I D
20
TYP
F
15
45
15
35
80
-65 to +150
100
200
100
20
10
MAX
1.0
1.0
1.0
1.1
12
45
8
R3 (29-February 2008)
TM
UNITS
UNITS
mW
mA
mA
mS
μA
μA
μA
°C
pF
pF
pF
ns
ns
Ω
Ω
Ω
V
V
V
V
Related parts for cedm8001
cedm8001 Summary of contents
Page 1
... V DD =3.0V =2.5V =10mA Central Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM8001 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low r DS(on) and Low Theshold Voltage. ...
Page 2
... Central TM Semiconductor Corp. SOT-883L - MECHANICAL OUTLINE CEDM8001 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET LEAD CODE: 1) GATE 2) SOURCE 3) DRAIN R3 (29-February 2008) ...