cedm7001 Central Semiconductor Corp., cedm7001 Datasheet
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cedm7001
Manufacturer Part Number
cedm7001
Description
N-channel Small Signal Dmos Fets Single
Manufacturer
Central Semiconductor Corp.
Datasheet
1.CEDM7001.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
cedm7001TR
Manufacturer:
CENTRAL
Quantity:
20 000
MAXIMUM RATINGS (T A =25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Continuous Drain Current
Power Dissipation
Operating and Storage
Junction Temperature
ELECTRICAL CHARACTERISTICS (T A =25°C unless otherwise noted)
SYMBOL
I GSSF
I GSSR
I DSS
BV DSS
V GS(th)
r DS(ON)
r DS(ON)
r DS(ON)
Y fs
C rss
C iss
C oss
t on
t off
MARKING CODE:
ENHANCEMENT-MODE
Top View
SURFACE MOUNT
SILICON MOSFET
SOT-883L CASE
N-CHANNEL
CEDM7001
TEST CONDITIONS
V GS =10V, V DS =0V
V GS =10V, V DS =0V
V DS =20V, V GS =0V
V GS =0V, I D =100µA
V DS =V GS , I D =250µA
V GS =4.0V, I D =10mA
V GS =2.5V, I D =10mA
V GS =1.5V, I D =1.0mA
V DS =10V, I D =100mA
V DS =3.0V, V GS =0, f=1.0MHz
V DS =3.0V, V GS =0, f=1.0MHz
V DS =3.0V, V GS =0, f=1.0MHz
V DD =3.0V, V GS =2.5V, I D =10mA
V DD =3.0V, V GS =2.5V, I D =10mA
CEDM7001:
Bottom View
H
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CEDM7001
Enhancement-mode
manufactured by the N-Channel DMOS Process, designed for
high
This MOSFET offers Low r DS(on) and Low Theshold Voltage.
APPLICATIONS:
• Load/Power Switches
• Power Supply Converter
FEATURES:
• Power Dissipation 100mW
• Low Package Profile, 0.4mm
• Low r DS(on)
SYMBOL
Circuits
T J , T stg
V GS
V DS
P D
I D
I D
speed
Central
Semiconductor Corp.
MIN
100
0.6
20
pulsed
-65 to +150
TYP
4.0
9.0
9.5
50
75
N-Channel
100
200
100
amplifier
20
10
MAX
0.9
1.0
1.0
1.0
3.0
4.0
15
• Battery Powered Portable
Equipment
• Low Threshold Voltage
• Logic Level Compatible
• Small, TLP™ 1x0.6mm,
and
Field
SOT-883L Leadless Surface
Mount Package
UNITS
mW
mA
mA
°C
V
V
driver
R3 (31-July 2007)
Effect
TM
UNITS
mS
µA
µA
µA
pF
pF
pF
ns
ns
Ω
Ω
Ω
V
V
applications.
Transistor,
is an
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cedm7001 Summary of contents
Page 1
... V DS =3.0V =0, f=1.0MHz =3.0V =2.5V =10mA t off V DD =3.0V =2.5V =10mA Central Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7001 Enhancement-mode N-Channel manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier This MOSFET offers Low r DS(on) and Low Theshold Voltage. ...
Page 2
... Central TM Semiconductor Corp. SOT-883L - MECHANICAL OUTLINE CEDM7001 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET LEAD CODE: 1) GATE 2) SOURCE 3) DRAIN R3 (31-July 2007) ...