vp5225 Supertex, Inc., vp5225 Datasheet

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vp5225

Manufacturer Part Number
vp5225
Description
P-channel Enhancement-mode Vertical Dmos Fet
Manufacturer
Supertex, Inc.
Datasheet
Features
Applications
Absolute Maximum Ratings
Absolute Maximum Ratings are those values beyond which damage to
the device may occur. Functional operation under these conditions is
not implied. Continuous operation of the device at the absolute rating
level may affect device reliability. All voltages are referenced to device
ground.
* Distance of 1.6mm from case for 10 seconds.
Ordering Information
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
Low threshold (-2.4V max.)
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Medical Ultrasound imaging
Non-destructive evaluation
Solid state relays
Telecom switches
Logic level interfaces – ideal for TTL and CMOS
VP5225
Device
3-Lead TO-252 (D-PAK)
Package Option
VP5225K4
P-Channel Enhancement-Mode
Vertical DMOS FET
-55
O
C to +150
300
Value
BV
BV
±20V
DGS
DSS
O
O
C
C
BV
DSS
-250
(V)
Pin Configuration
Product Marking
/BV
General Description
This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
DGS
LLLLLLL
VP5225
YYWW
3-Lead TO-252 (D-PAK) (K4)
3-Lead TO-252 (D-PAK) (K4)
DRAIN
R
(max)
DS(ON)
3.0
(Ω)
YY = Year Sealed
WW = Week Sealed
L = Lot Number
GATE
SOURCE
VP5225
I
(min)
-2.5
D(ON)
(A)

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vp5225 Summary of contents

Page 1

... BV /BV DSS DGS (V) -250 Pin Configuration Value BV DSS BV DGS ±20V - +150 300 C O Product Marking R DS(ON) (max) (Ω) 3.0 DRAIN SOURCE GATE 3-Lead TO-252 (D-PAK) (K4) YYWW YY = Year Sealed VP5225 WW = Week Sealed L = Lot Number LLLLLLL 3-Lead TO-252 (D-PAK) (K4) VP5225 I D(ON) (min) (A) -2.5 ...

Page 2

... -10V -1. mmho V = -25V -200mA DS D 400 V = 0V, GS 150 -25V 1.0MHz -25V -500mA 25Ω GEN -500mA 0V -500mA GEN D.U.T. Output INPUT VP5225 I DRM (A) 3.0 ...

Page 3

... JEDEC Registration TO-252, Variation AA, Issue E, June 2004. Drawings not to scale. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP-VP5225 NR053008 ...

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