sia433edj Vishay, sia433edj Datasheet - Page 3
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sia433edj
Manufacturer Part Number
sia433edj
Description
P-channel 20-v D-s Mosfet
Manufacturer
Vishay
Datasheet
1.SIA433EDJ.pdf
(7 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
sia433edj-T1-GE3
Manufacturer:
LITTLEFUSE
Quantity:
40 000
Part Number:
sia433edj-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 65472
S09-2114-Rev. A, 12-Oct-09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
1.0
0.8
0.6
0.4
0.2
0.0
50
40
30
20
10
0
0.0
0
0
Gate Current vs. Gate-Source Voltage
0.5
On-Resistance vs. Drain Current
10
V
3
V
V
GS
DS
GS
Output Characteristics
= 1.8 V
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
I
1.0
D
- Drain Current (A)
20
6
V
GS
1.5
V
= 5 V thru 3 V
GS
30
= 4.5 V
9
2.0
V
V
T
V
V
GS
J
GS
GS
GS
40
12
= 25 °C
= 2.5 V
2.5
= 2.5 V
= 2 V
= 1.5 V
3.0
50
15
10
10
10
10
10
10
10
10
10
10
-2
-3
-4
-5
-6
-7
-8
-9
8
6
4
2
0
8
6
4
2
0
0.0
0
0
I
D
V
Gate Current vs. Gate-Source Voltage
DS
= 11 A
T
10
J
3
= 5 V
V
V
= 150 °C
0.5
GS
GS
Transfer Characteristics
Q
g
- Gate-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
V
- Total Gate Charge (nC)
T
DS
C
Gate Charge
20
6
= 125 °C
= 10 V
T
1.0
C
= 25 °C
Vishay Siliconix
T
J
30
9
= 25 °C
SiA433EDJ
V
DS
1.5
T
= 16 V
www.vishay.com
C
12
40
= - 55 °C
2.0
50
15
3