sqm110n04-04 Vishay, sqm110n04-04 Datasheet
sqm110n04-04
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sqm110n04-04 Summary of contents
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... 0 ° ° stg SYMBOL c PCB Mount R thJA R thJC SQM110N04-04 Vishay Siliconix ® Power MOSFET d www.vishay.com/applications LIMIT UNIT 40 V ± 20 120 107 A 120 350 180 250 W 3. 175 °C LIMIT UNIT 40 ° ...
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... SQM110N04-04 Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted C PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
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... Drain-to-Source Voltage (V) DS Capacitance Document Number: 68830 S09-1033-Rev. A, 08-Jun- °C, unless otherwise noted ° °C 125 ° SQM110N04-04 Vishay Siliconix 250 200 150 100 T = 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 0 ...
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... SQM110N04-04 Vishay Siliconix TYPICAL CHARACTERISTICS T 2 1.6 1.2 0.8 0.4 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature THERMAL RATINGS °C, unless otherwise noted A 120 100 100 T - Ambient Temperature (°C) C Maximum Drain Current vs. Ambient Temperature www ...
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... C Single Pulse 0.1 0 Drain-to-Source Voltage ( minimum V at which DS(on) Safe Operating Area Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SQM110N04-04 Vishay Siliconix 10 µs 100 µ 100 ms DC 100 is specified 1 1 www.vishay.com 10 5 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...