sfi9510 Fairchild Semiconductor, sfi9510 Datasheet
sfi9510
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sfi9510 Summary of contents
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Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area o 175 C Operating Temperature Lower Leakage Current : 10 A (Max.) ...
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SFW/I9510 Electrical Characteristics Symbol Characteristic BV Drain-Source Breakdown Voltage DSS BV/ T Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS Static Drain-Source R ...
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P-CHANNEL POWER MOSFET Fig 1. Output Characteristics Top : - 5.0 V Bottom : - ...
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SFW/I9510 Fig 7. Breakdown Voltage vs. Temperature ...
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P-CHANNEL POWER MOSFET Fig 12. Gate Charge Test Circuit & Waveform “ Current Regulator ” 50K 12V 200nF 300nF V GS -3mA R 1 Current Sampling ( Resistor Fig 13. Resistive Switching Test Circuit & Waveforms V out ...
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SFW/I9510 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT Driver Driver ) DUT ) DUT ) + ...
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... TM 2 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS ...