ipb036n12n3 Infineon Technologies Corporation, ipb036n12n3 Datasheet - Page 7

• Manufacturer Part Number: ipb036n12n3
• Description: Optimos 3 Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.0
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
10
10
10
10
135
130
125
120
115
110
AV
3
2
1
0
=f(T
10
); R
-60
0
j
GS
); I
j(start)
=25
-20
D
=1 mA
10
1
20
150 °C
t
T
AV
10
j
60
[°C]
100 °C
[µs]
2
25 °C
100
10
3
140
180
10
page 7
4
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
10
V
8
6
4
2
0
g(th)
g s(th)
GS
0
gate
); I
DD
Q
D
=100 A pulsed
g s
40
Q
Q
gate
g
Q
80
[nC]
sw
Q
20 V
g d
IPB036N12N3 G
120
40 V
60 V
Q
g ate
2009-07-16
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