ipb025n10n3g Infineon Technologies Corporation, ipb025n10n3g Datasheet - Page 6

• Manufacturer Part Number: ipb025n10n3g
• Description: Optimos 3 Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.1
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
10
6
5
4
3
2
1
0
DS
=f(T
-60
5
4
3
2
1
); V
0
j
); I
GS
-20
D
=0 V; f =1 MHz
=100 A; V
20
20
98 %
GS
T
V
=10 V
j
DS
60
[°C]
40
Coss
Crss
Ciss
[V]
typ
100
60
140
180
page 6
80
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
3.5
2.5
1.5
0.5
10
10
10
10
=f(T
SD
4
3
2
1
0
3
2
1
0
-60
)
0
j
); V
D
j
GS
-20
=V
0.5
175 °C
DS
20
25 °C
V
T
275 µA
25 °C, 98%
SD
j
60
[°C]
1
[V]
2750 µA
IPB025N10N3 G
100
1.5
140
175 °C, 98%
2008-10-20
180
2