fds4070n704 Fairchild Semiconductor, fds4070n704 Datasheet - Page 3
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fds4070n704
Manufacturer Part Number
fds4070n704
Description
N-channel Powertrench Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDS4070N704.pdf
(8 pages)
Notes:
1. R
Scale 1 : 1 on letter size pape
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0
Electrical Characteristics
Symbol
Drain–Source Diode Characteristics and Maximum Ratings
I
V
t
Q
the drain pins. R
S
rr
SD
θJA
rr
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
θJC
is guaranteed by design while R
Parameter
a)
40°C/W when
mounted on a 1in
of 2 oz copper
θCA
is determined by the user's board design.
T
2
A
V
I
d
F
pad
iF
= 25°C unless otherwise noted
GS
= 15.3 A,
/d
= 0 V,
t
= 100 A/µs
Test Conditions
I
S
= 2.5 A
(Note 2)
Min Typ Max Units
b)
85°C/W when mounted on
a minimum pad of 2 oz
copper
0.7
32
39
2.5
1.2
FDS4070N7 Rev B2 (W)
nS
nC
A
V