fdd6035al Fairchild Semiconductor, fdd6035al Datasheet - Page 5

• Manufacturer Part Number: fdd6035al
• Description: N-channel, Logic Level, Powertrench Mosfet
• Manufacturer: Fairchild Semiconductor

Typical Characteristics
10
1000
0.01
8
6
4
2
0
100
0.1
10
0
1
Figure 9. Maximum Safe Operating Area
0.1
Figure 7. Gate Charge Characteristics
I
0.0001
D
0.001
= 12 A
R
SINGLE PULSE
0.01
R
DS(ON)
0.1
V
JA
T
0.0001
1
GS
A
= 96
= 25
= 4.5V
LIMIT
5
o
o
C/W
C
V
DS
D = 0.5
, DRAIN-SOURCE VOLTAGE (V)
Q
0.2
0.1
g
1
0.05
, GATE CHARGE (nC)
10
0.02
DC
0.01
0.001
SINGLE PULSE
10
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
1s
Figure 11. Transient Thermal Response Curve
15
100ms
V
DS
= 10V
10ms
10
15V
0.01
1ms
20
100µs
20V
25
100
0.1
t
1
, TIME (sec)
100
1800
1500
1200
80
60
40
20
900
600
300
0
0.01
0
0
Figure 8. Capacitance Characteristics
C
Figure 10. Single Pulse Maximum
1
rss
5
V
0.1
DS
Power Dissipation
, DRAIN TO SOURCE VOLTAGE (V)
10
10
C
t
1
oss
, TIME (sec)
15
1
C
iss
P(pk)
Duty Cycle, D = t
T
R
J
R
- T
JA
100
20
JA
(t) = r(t) * R
A
t
= 96 °C/W
1
= P * R
t
2
10
SINGLE PULSE
V
R
f = 1MHz
FDD6035AL Rev. D(W)
GS
T
JA
25
A
= 0 V
= 96°C/W
JA
= 25°C
1
JA
(t)
/ t
2
1000
30
100