bso150n03mdg Infineon Technologies Corporation, bso150n03mdg Datasheet - Page 3
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bso150n03mdg
Manufacturer Part Number
bso150n03mdg
Description
Optimos 3 M-series Power- Power Mosfet
Manufacturer
Infineon Technologies Corporation
Datasheet
1.BSO150N03MDG.pdf
(9 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSO150N03MDG
Manufacturer:
INFINEON
Quantity:
10 000
Rev.1.0
4)
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
Gate charge total, sync. FET
Output charge
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
See figure 16 for gate charge parameter definition
4)
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
Q
Q
V
Q
Q
Q
I
I
V
Q
d(on)
r
d(off)
f
S
S,pulse
rss
plateau
SD
iss
oss
gs
g(th)
gd
sw
g
g
g(sync)
oss
rr
V
f =1 MHz
V
I
V
V
V
V
V
V
V
T
V
T
V
di
D
page 3
A
j
GS
DD
DD
GS
DD
GS
DS
GS
DD
GS
R
=9.3 A, R
=25 °C
F
=25 °C
=15 V, I
/dt =400 A/µs
=0.1 V,
=0 V, V
=15 V, V
=15 V, I
=0 to 4.5 V
=15 V, I
=0 to 10 V
=0 to 4.5 V
=15 V, V
=0 V, I
F
F
DS
=9.3 A,
G
=I
D
D
GS
=1.6
GS
=9.3 A,
=9.3 A,
=15 V,
S
=4.5 V,
=0 V
,
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
12.6
0.87
typ.
970
340
7.3
3.8
8.7
4.2
2.8
1.5
1.4
2.6
6.1
2.9
5.3
8.9
20
-
-
-
BSO150N03MD G
max.
1300
450
7.0
2.4
1.1
17
12
65
10
8
-
-
-
-
-
-
-
-
-
-
Unit
pF
ns
nC
V
nC
A
V
nC
2008-07-08