nvtfs5820nl ON Semiconductor, nvtfs5820nl Datasheet - Page 3
nvtfs5820nl
Manufacturer Part Number
nvtfs5820nl
Description
Nvtfs5820nl Power Mosfet
Manufacturer
ON Semiconductor
Datasheet
1.NVTFS5820NL.pdf
(6 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
0.030
0.025
0.020
0.015
0.010
0.005
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
80
70
60
50
40
30
20
10
0
−50
2
0
Figure 3. On−Resistance vs. Gate−to−Source
V
I
D
GS
10 V
−25
Figure 5. On−Resistance Variation with
= 10 A
Figure 1. On−Region Characteristics
V
= 10 V
V
DS
GS
T
1
4
J
, DRAIN−TO−SOURCE VOLTAGE (V)
0
, GATE−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
25
V
GS
Temperature
2
6
= 5 V
Voltage
50
75
3
8
100
4.0 V
3.8 V
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
TYPICAL CHARACTERISTICS
125
T
I
10
T
4
D
J
J
= 25°C
= 10 A
= 25°C
http://onsemi.com
150
175
5
12
3
100,000
10,000
0.016
0.014
0.012
0.010
0.008
1,000
100
80
70
60
50
40
30
20
10
0
10
1
5
Figure 4. On−Resistance vs. Drain Current and
V
V
Figure 6. Drain−to−Source Leakage Current
GS
DS
T
J
= 0 V
≥ 10 V
= 25°C
10
V
V
Figure 2. Transfer Characteristics
DS
GS
T
T
20
J
, DRAIN−TO−SOURCE VOLTAGE (V)
J
, GATE−TO−SOURCE VOLTAGE (V)
= 25°C
= 125°C
2
15
I
D
, DRAIN CURRENT (A)
Gate Voltage
vs. Voltage
30
V
20
GS
T
= 4.5 V
3
J
V
= 150°C
GS
T
J
25
= −55°C
= 10 V
40
T
J
= 125°C
30
4
50
35
40
60
5