sts3dpfs40 STMicroelectronics, sts3dpfs40 Datasheet
sts3dpfs40
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sts3dpfs40 Summary of contents
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... Surge Non Repetitive Forward Current FSM I Repetitive Peak Reverse Current RRM I Non Repetitive Peak Reverse Current RSM dv/dt Critical Rate Of Rise Of Reverse Voltage ( )Pulse width limited by safe operating area November 2000 STS3DPFS40 P-CHANNEL 40V - 0.070 - 3A SO F(MAX) 0.51 V SO-8 INTERNAL SCHEMATIC DIAGRAM Value = 25 C ...
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... STS3DPFS40 THERMAL DATA Rthj-amb (*)Thermal Resistance Junction-ambient MOSFET Rthj-amb (*)Thermal Resistance Junction-ambient SCHOTTKY Maximum T Storage Temperature Range stg T Junction Temperature l (*) Mounted on FR-4 board (Steady State) MOSFET ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter V Drain-source (BR)DSS Breakdown Voltage I Zero Gate Voltage ...
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... (see test circuit, Figure 5) Test Conditions Min 125 125 STS3DPFS40 Typ. Max. Unit 24 5.5 nC Typ. Max. Unit 100 Typ. ...
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... STS3DPFS40 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/6 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...
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... SO-8 MECHANICAL DATA mm DIM. MIN. TYP 0 0.65 b 0.35 b1 0. 4.8 E 5.8 e 1.27 e3 3.81 F 3 STS3DPFS40 inch MAX. MIN. TYP. 1.75 0.25 0.003 1.65 0.85 0.025 0.48 0.013 0.25 0.007 0.5 0.010 45 (typ.) 5.0 0.188 6.2 0.228 0.050 0.150 4.0 0.14 1.27 0.015 0.6 8 (max.) 0016023 MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 0.196 0.244 ...
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... STS3DPFS40 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...