sts3c3f30l STMicroelectronics, sts3c3f30l Datasheet

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sts3c3f30l

Manufacturer Part Number
sts3c3f30l
Description
N-channel 30v - 0.050 Ohm - 3.5a So-8 P-channel 30v - 0.140 Ohm - 3a So-8 Stripfet?? Ii Power Mosfet
Manufacturer
STMicroelectronics
Datasheet

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STS3C3F30L
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DESCRIPTION
This application specific Power MOSFET is the second
generation of STMicroelectronis unique "Single Feature
Size™" strip-based process. The resulting transistor
shows extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less critical
alignment steps therefore a remarkable manufacturing re-
producibility.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(
February 2002
.
STS3C3F30L(N-Channel)
STS3C3F30L(P-Channel)
TYPICAL R
TYPICAL R
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
LOW THRESHOLD DRIVE
DC/DC CONVERTERS
BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
POWER MANAGEMENT IN CELLULAR
PHONES
Pulse width limited by safe operating area.
Symbol
I
V
DM
V
V
P
T
DGR
I
I
T
GS
stg
DS
D
D
tot
(
j
TYPE
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuos) at T
Single Operating
Drain Current (continuos) at T
Single Operating
Drain Current (pulsed)
Total Dissipation at T
Total Dissipation at T
Storage Temperature
Max. Operating Junction Temperature
DS
DS
(on) (N-Channel) = 50 m
(on) (P-Channel) = 140 m
V
30 V
30 V
DSS
Parameter
C
C
< 165 m
GS
< 65 m
R
= 25°C Dual Operating
= 25°C Single Operating
GS
DS(on)
= 20 k )
= 0)
C
C
= 25°C
= 100°C
3.5 A
3 A
I
D
N-CHANNEL 30V - 0.050
P-CHANNEL 30V - 0.140
INTERNAL SCHEMATIC DIAGRAM
Note: P-CHANNEL MOSFET actual polarity of voltages and current
has to be reversed
STripFET™ II POWER MOSFET
N-CHANNEL
3.5
2.2
14
-60 to 150
± 16
150
1.6
30
30
2
STS3C3F30L
SO-8
P-CHANNEL
2.7
1.7
11
- 3.5A SO-8
- 3A SO-8
Unit
°C
°C
W
W
V
V
V
A
A
A
1/10

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sts3c3f30l Summary of contents

Page 1

... A INTERNAL SCHEMATIC DIAGRAM N-CHANNEL = 25°C C 3.5 = 100°C C 2.2 = 25°C Dual Operating = 25°C Single Operating Note: P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed STS3C3F30L - 3.5A SO SO-8 SO-8 P-CHANNEL Unit 30 30 ± 16 2 -60 to 150 ° ...

Page 2

... STS3C3F30L THERMAL DATA Rthj-amb Thermal Resistance Junction-ambient (1) T Maximum Lead Temperature For Soldering Purpose l 2 when mounted on 0.5 in pad of 2 oz. copper (1) ELECTRICAL CHARACTERISTICS (T OFF Symbol Parameter Drain-source V (BR)DSS Breakdown Voltage Zero Gate Voltage I DSS Drain Current ( Gate-body Leakage I GSS Current (V ...

Page 3

... SD GS N-CHANNEL I = 3.5 A di/dt = 100A/ s n- =150 P-CHANNEL n- di/dt = 100A p- =150 n-ch (see test circuit, Figure 3) p-ch STS3C3F30L Min. Typ. Max. Unit Min. Typ. Max. Unit ...

Page 4

... STS3C3F30L n-ch Safe Operating Area n-ch Output Characteristics n-ch Transconductance 4/10 n-ch Thermal Impedance n-ch Transfer Characteristics n-ch Static Drain-source On Resistance ...

Page 5

... Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics n-ch Capacitance Variations n-ch Normalized on Resistance vs Temperature n-ch STS3C3F30L n-ch n-ch 5/10 ...

Page 6

... STS3C3F30L p-ch Safe Operating Area p-ch Output Characteristics p-ch Transconductance 6/10 p-ch Thermal Impedance p-ch Transfer Characteristics p-ch Static Drain-source On Resistance ...

Page 7

... Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics p-ch Capacitance Variations p-ch Normalized on Resistance vs Temperature p-ch STS3C3F30L p-ch p-ch 7/10 ...

Page 8

... STS3C3F30L Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 3: Test Circuit For Diode Recovery Behaviour 8/10 Fig. 2: Gate Charge test Circuit ...

Page 9

... MIN. TYP 0 0.65 b 0.35 b1 0. 4.8 E 5.8 e 1.27 e3 3.81 F 3 inch MAX. MIN. TYP. 1.75 0.25 0.003 1.65 0.85 0.025 0.48 0.013 0.25 0.007 0.5 0.010 45 (typ.) 5.0 0.188 6.2 0.228 0.050 0.150 4.0 0.14 1.27 0.015 0.6 8 (max.) STS3C3F30L MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 0.196 0.244 0.157 0.050 0.023 0016023 9/10 ...

Page 10

... STS3C3F30L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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