bso080p03ns3eg Infineon Technologies Corporation, bso080p03ns3eg Datasheet - Page 7

• Manufacturer Part Number: bso080p03ns3eg
• Description: Optimos 3 P3-power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.0
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
100
0.1
10
34
32
30
28
26
24
22
20
AV
1
-60
=f(T
); R
1
j
GS
); I
j(start)
-20
=25
D
=1 mA
10
20
t
T
125 °C
AV
j
60
[°C]
[µs]
100
100
100 °C
140
25 °C
1000
180
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
10
Q
V
9
8
7
6
5
4
3
2
1
0
V
g(th)
g s(th)
0
GS
gate
); I
DD
Q
D
=14.8 A pulsed
g s
20
Q
Q
gate
g
Q
40
[nC]
sw
BSO080P03NS3E G
Q
6 V
g d
15 V
24 V
60
Q
g ate
2009-05-26
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