bso220n Infineon Technologies Corporation, bso220n Datasheet

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bso220n

Manufacturer Part Number
bso220n
Description
Sipmos-r Small Signal Transistor
Manufacturer
Infineon Technologies Corporation
Datasheet

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Data Sheet
SIPMOS ® Small-Signal-Transistor
Features
• Dual N Channel
• Avalanche rated
• Logic Level
• d v /d t rated
Preliminary Data
Maximum Ratings, at T j = 25 ˚C, unless otherwise specified
Parameter
Continuous drain current, one channel active
T
Pulsed drain current, one channel active
T
Avalanche energy, single pulse
I
Avalanche current,periodic limited by T
Avalanche energy, periodic limited by T
Reverse diode d v /d t
I
Gate source voltage
Power dissipation, one channel active
T
Operating temperature
Storage temperature
IEC climatic category; DIN IEC 68-1
D
S
Enhancement mode
A
A
A
= 3.2 A, V
= 3.2 A, V
= 25 ˚C
= 25 ˚C
= 25 ˚C
DS
DD
= 24 V, d i /d t = 200 A/µs
= 25 V, R
GS
= 25 Ω
Drain source voltage
Drain-Source on-state resistance
Continuous drain current
Type
BSO220N
jmax
jmax
Product Summary
1
Symbol
I
I
E
I
E
d v /d t
V
P
T
T
D
Dpulse
AR
j
stg
AS
AR
GS
tot
Package
SO 8
-55 ... +150
-55 ... +150
55/150/56
Value
12.8
V
R
I
±20
3.2
3.2
0.2
D
15
6
2
DS
DS(on)
Ordering Code
Q67000-S4010
BSO 220N
0.13
3.2
20
Unit
A
mJ
A
mJ
kV/µs
V
W
˚C
05.99
V
A

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bso220n Summary of contents

Page 1

... Gate source voltage Power dissipation, one channel active ˚C A Operating temperature Storage temperature IEC climatic category; DIN IEC 68-1 Data Sheet Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current Type Package BSO220N SO 8 Symbol Dpulse jmax AR E jmax AR ...

Page 2

Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point Thermal resistance @ 10 sec., min. footprint Thermal resistance @ 10 sec cooling area Electrical Characteristics ˚C, unless otherwise specified Parameter ...

Page 3

Electrical Characteristics Parameter Characteristics Transconductance V ≤ 2 DS(on)max D Input capacitance MHz GS DS Output capacitance ...

Page 4

Electrical Characteristics ˚C, unless otherwise specified Parameter ˚C, unless otherwise specified Dynamic Characteristics Gate charge at threshold ≥0 ...

Page 5

... Data Sheet Drain current BSO220N 3.6 A 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 ˚C 120 160 T A Transient thermal impedance thJA p parameter : BSO220N 21.0µs 100 µ BSO 220N ˚ 100 ...

Page 6

... 6.0 5.0 4.0 3.0 2.0 1.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Typ. capacitances parameter MHz Data Sheet Drain-source on-resistance DS(on) j parameter : I D BSO220N 0.40 Ω [V] 0. 2.5 b 3.0 0.28 c 3.5 d 4.0 0. 5.0 0.20 g 5.5 h 6.0 0.16 i 6 8.0 0.12 l 10.0 0.08 b 0.04 a 0.00 V 5.0 -60 ...

Page 7

... V ≥ DS(on) max 6.0 A 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Forward characteristics of reverse diode parameter µ BSO220N ˚C typ 150 ˚C typ ˚C (98 150 ˚C (98 0.0 0.4 0.8 1.2 1.6 Data Sheet Gate threshold voltage = ...

Page 8

... Drain-source breakdown voltage (BR)DSS j BSO220N 24.5 V 23.5 23.0 22.5 22.0 21.5 21.0 20.5 20.0 19.5 19.0 18.5 18.0 -60 - Data Sheet Typ. gate charge ) parameter: I BSO220N 120 ˚C 160 ˚C 100 180 BSO 220N ) Gate = 2 puls V V 0,2 0,8 DS max DS max ...

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