gf4450 Greenray Industries Inc., gf4450 Datasheet

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gf4450

Manufacturer Part Number
gf4450
Description
N-channel Enhancement-mode Mosfet Neral Semiconductor
Manufacturer
Greenray Industries Inc.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
GF4450
Manufacturer:
BOSS
Quantity:
63
Part Number:
GF4450
Manufacturer:
GENERAL
Quantity:
20 000
Mechanical Data
Case: SO-8 molded plastic body
Terminals: Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Mounting Position: Any
Weight: 0.5g
Maximum Ratings and Thermal Characteristics
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Junction-to-Ambient Thermal Resistance
Note: (1) Surface Mounted on FR4 Board, t
0.050 (1.27)
8
1
0.197 (5.00)
0.189 (4.80)
0.009 (0.23)
0.004 (0.10)
5
4
0.157 (3.99)
0.150 (3.81)
0.020 (0.51)
0.013 (0.33)
SO-8
(1)
0.069 (1.75)
0.053 (1.35)
(1)
0.244 (6.20)
0.228 (5.79)
10s
0 – 8
T
T
(1)
Dimensions in inches
A
A
0.019 (0.48)
0.010 (0.25)
N-Channel Enhancement-Mode MOSFET
and (millimeters)
= 25°C
= 70°C
x 45
0.016 (0.41)
0.050(1.27)
0.009 (0.23)
0.007 (0.18)
Symbol
T
R
Features
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low
• Specially Designed for Low Voltage DC/DC
• Fast Switching for High Efficiency
J
V
V
I
P
, T
DM
I
On-Resistance
Converters
DS
GS
D
D
JA
stg
0.035 (0.889)
0.025 (0.635)
(T
0.245 (6.22)
A
V
= 25°C unless otherwise noted)
DS
Min.
Mounting Pad Layout
–55 to 150
60V R
Limit
±
7.5
2.5
1.6
60
50
50
20
DS(ON)
GF4450
24
0.05 (1.27)
0.04 (1.02)
0.050 typ.
0.165 (4.19)
0.155 (3.94)
m
(1.27)
°C/W
Unit
°C
W
V
A
I
D
7/10/01
7.5A

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gf4450 Summary of contents

Page 1

... Fast Switching for High Efficiency Symbol 25° 70° stg ( GF4450 V 60V DS(ON) m 0.05 (1.27) 0.04 (1.02) 0.165 (4.19) 0.245 (6.22) Min. 0.155 (3.94) 0.050 typ. (1.27) Mounting Pad Layout (T = 25°C unless otherwise noted) A Limit Unit 60 V ± ...

Page 2

... 30V oss 1.0MH rss 2.1A 10s Switching R D Waveforms V D OUT Output, V DUT S GF4450 Min Typ Max 60 – – 2.0 – – ± ± 20V – – 100 = 0V – – 1.0 = 10V 20 – – – 6.5A – – ...

Page 3

... GF4450 Fig. 2 – Transfer Characteristics V = 10V 125 -- Gate-to-Source Voltage (V) GS Fig. 4 – On-Resistance vs. Drain Current 10V 10 20 ...

Page 4

... 7. 100 f = 1MHz 0.1 0. GF4450 Fig. 7 – Gate Charge V = 30V 7. Gate Charge (nC) g Fig. 9 – Source-Drain Diode Forward Voltage 125 ...

Page 5

... N-Channel Enhancement-Mode MOSFET (T = 25°C unless otherwise noted 100 125 150 Fig. 13 – Maximum Safe Operating Area 100 10 1 0.1 0.01 10 100 0.1 GF4450 Fig. 11 – Transient Thermal Impedance 10s 10V GS Single Pulse 2 on 1-in 2oz Cu Drain-Source Voltage (V) DS ...

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