fdd2572-f085 Fairchild Semiconductor, fdd2572-f085 Datasheet

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fdd2572-f085

Manufacturer Part Number
fdd2572-f085
Description
Fdd2572 / Fdu2572 N-channel Powertrench? Mosfet? 150v, 29a, 54mohm
Manufacturer
Fairchild Semiconductor
Datasheet

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Manufacturer
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Part Number:
FDD2572-F085
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
FDD2572-F085
Quantity:
25 000
©2008 Fairchild Semiconductor Corporation
FDD2572_F085 Rev.A
FDD2572_F085
N-Channel PowerTrench
150V, 29A, 54m
Features
• r
• Q
• Low Miller Charge
• Low Q
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
• RoHS Compliant
Formerly developmental type 82860
MOSFET Maximum Ratings
Thermal Characteristics
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
R
R
R
V
V
I
E
P
T
D
GS
J
DSS
AS
D
Symbol
, T
JC
JA
JA
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
DS(ON)
g
(tot) = 26nC (Typ.), V
STG
RR
= 45m (Typ.), V
Body Diode
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
Continuous (T
Continuous (T
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
Operating and Storage Temperature
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in
SOURCE
GATE
GS
GS
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
amb
C
C
= 10V
= 10V, I
= 25
= 100
o
C
TO-252AA
FDD SERIES
= 25
o
C, V
o
o
C, V
D
C, V
®
= 9A
GS
GS
MOSFET
GS
(FLANGE)
= 10V)
Parameter
= 10V)
DRAIN
T
= 10V, R
C
= 25°C unless otherwise noted
certification.
JA
= 52
o
1
C/W)
Applications
• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection Systems
• 42V Automotive Load Control
• Electronic Valve Train Systems
2
copper pad area
G
D
S
-55 to 175
Ratings
Figure 4
1.11
150
135
100
0.9
29
20
36
52
20
4
November 2008
www.fairchildsemi.com
Units
W/
o
o
o
C/W
C/W
C/W
mJ
o
W
V
V
A
A
A
S
C
o
C

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fdd2572-f085 Summary of contents

Page 1

... This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems ©2008 Fairchild Semiconductor Corporation FDD2572_F085 Rev.A ® MOSFET Applications = 9A • ...

Page 2

... Drain-Source Diode Characteristics V Source to Drain Diode Voltage SD t Reverse Recovery Time rr Q Reverse Recovered Charge RR Notes: 1: Starting T = 25° 0.2mH 19A FDD2572_F085 Rev.A Package Reel Size TO-252AA 330mm T = 25°C unless otherwise noted C Test Conditions I = 250 120V ...

Page 3

... Figure 3. Normalized Maximum Transient Thermal Impedance 500 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 100 V = 10V FDD2572_F085 Rev 25°C unless otherwise noted 150 175 125 Figure 2. Maximum Continuous Drain Current vs ...

Page 4

... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 10V DRAIN CURRENT (A) D Figure 9. Drain to Source On Resistance vs Drain Current FDD2572_F085 Rev 25°C unless otherwise noted C 100 10 s 100 s 10 1ms 10ms 0.1 0.001 ...

Page 5

... OSS RSS GD 100 1MHz DRAIN TO SOURCE VOLTAGE (V) DS Figure 13. Capacitance vs Drain to Source Voltage FDD2572_F085 Rev 25°C unless otherwise noted C 1 250 1.1 1.0 0.9 80 120 160 200 - Figure 12. Normalized Drain to Source ...

Page 6

... REQUIRED PEAK Figure 15. Unclamped Energy Test Circuit g(REF) Figure 17. Gate Charge Test Circuit Figure 19. Switching Time Test Circuit FDD2572_F085 Rev DUT 0.01 Figure 16. Unclamped Energy Waveforms ...

Page 7

... The area, in square inches or square centimeters is the top copper area including the gate and source pads. 23.84 33.32 + ------------------------------------ - 0.268 + Area 154 33.32 + --------------------------------- - 1.73 + Area FDD2572_F085 Rev and the JM 125 , application’s ambient 100 never exceeded (EQ 0.01 (0.0645 Figure 21 ...

Page 8

... PSPICE Electrical Model .SUBCKT FDD2572 rev April 2002 5.5e- 7.4e-10 Cin 6 8 1.7e-9 Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Dplcap 10 5 DplcapMOD Ebreak 160 Eds Egs Esg Evthres Evtemp ...

Page 9

... FDD2572_F085 Rev. A DPLCAP RSLC2 - RDRAIN 6 ...

Page 10

... CTHERM4 4 3 4.3e-3 CTHERM5 3 2 8.5e-3 CTHERM6 2 TL 3.0e-2 RTHERM1 TH 6 5.5e-4 RTHERM2 6 5 5.0e-3 RTHERM3 5 4 4.5e-2 RTHERM4 4 3 10.5e-2 RTHERM5 3 2 3.7e-1 RTHERM6 2 TL 3.8e-1 SABER Thermal Model SABER thermal model FDD2572 template thermal_model th tl thermal_c th ctherm.ctherm1 th 6 =3.8e-3 ctherm.ctherm2 6 5 =4.0e-3 ctherm.ctherm3 5 4 =4.2e-3 ctherm.ctherm4 4 3 =4.3e-3 ctherm.ctherm5 3 2 =8.5e-3 ctherm.ctherm6 2 tl =3.0e-2 rtherm ...

Page 11

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDD2572_F085 Rev.A ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...

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