ntms4101p ON Semiconductor, ntms4101p Datasheet

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ntms4101p

Manufacturer Part Number
ntms4101p
Description
Trench Power Mosfet 20 V, 9.0 A, Single P Channel, So 8
Manufacturer
ON Semiconductor
Datasheet
NTMS4101P
Trench Power MOSFET
20 V, 9.0 A, Single P−Channel, SO−8
Features
Applications
1. Surface−mounted on FR4 board using 1″ sq. pad size (Cu. area = 1.127 in.
THERMAL RESISTANCE RATINGS
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 1
MAXIMUM RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Operating Junction and Storage Temperature
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes
Junction−to−Ambient − Steady State (Note 1)
Junction−to−Ambient − t ≤ 10 s (Note 1)
Leading −20 V Trench for Low R
Surface Mount SO−8 Package Saves Board Space
Lead−Free Package for Green Manufacturing (G Suffix)
Power Management
Load Switch
Battery Protection
sq. [1 oz.] including traces).
Range
(1/8″ from case for 10 seconds)
Rating
(T
J
= 25°C unless otherwise noted)
Steady State
Steady State
t = 10 ms
t ≤ 10 s
DS(on)
Symbol
T
V
R
R
J
V
I
P
DSS
, T
T
DM
I
I
qJA
qJA
GS
D
S
D
L
stg
−55 to
Value
±8.0
−6.9
−9.0
1.38
−6.9
−20
−30
150
260
90
50
1
°C/W
Unit
°C
°C
W
V
V
A
A
A
NTMS4101PR2
NTMS4101PR2G
8
V
CASE 751
(BR)DSS
STYLE 12
−20 V
Device
SO−8
ORDERING INFORMATION
1
XXX = Specific Device Code
A
L
Y
W
G
http://onsemi.com
P−Channel MOSFET
16 mW @ −4.5 V
22 mW @ −2.5 V
= Assembly Location
= Wafer Lot
= Year
= Work Week
R
(Pb−Free)
Source
Source
Source
Package
DS(on)
MARKING DIAGRAM &
SO−8
SO−8
Gate
Publication Order Number:
PIN ASSIGNMENT
S
D
TYP
1
Top View
2500/Reel
2500/Reel
NTMS4101P/D
Shipping
I
8
D
−9.0 A
MAX
Drain
Drain
Drain
Drain

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ntms4101p Summary of contents

Page 1

... G D MARKING DIAGRAM & PIN ASSIGNMENT 1 8 Source Drain 1 Source Drain Source Drain Gate Drain Top View XXX = Specific Device Code A = Assembly Location L = Wafer Lot Y = Year W = Work Week ORDERING INFORMATION Package Shipping SO−8 2500/Reel SO−8 2500/Reel (Pb−Free) Publication Order Number: NTMS4101P/D ...

Page 2

ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Drain−to−Source On−Resistance Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge ...

Page 3

TYPICAL PERFORMANCE CURVES 25 − − −2 −1 −1 −1.4 V −1 −V , DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure ...

Page 4

TYPICAL PERFORMANCE CURVES 7000 6500 iss 6000 5500 5000 4500 C rss 4000 3500 3000 2500 2000 1500 1000 500 0 −8 −6 −4 −2 0 −V − GATE−TO−SOURCE OR ...

Page 5

... J J 0.19 0.25 0.007 0.010 K 0.40 1.27 0.016 0.050 0.25 0.50 0.010 0.020 S 5.80 6.20 0.228 0.244 STYLE 12: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTMS4101P/D ...

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