ntmsd3p102 ON Semiconductor, ntmsd3p102 Datasheet
ntmsd3p102
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ntmsd3p102 Summary of contents
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... E3P1 = Device Code Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping SO-8 2500/Tape & Reel SO-8 2500/Tape & Reel (Pb-Free) SO-8 2500/Tape & Reel (Pb-Free) Publication Order Number: NTMSD3P102R2/D † ...
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... SCHOTTKY ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage Maximum Instantaneous Forward Voltage Maximum Instantaneous Reverse Current Maximum Voltage Rate of Change 8. Indicates Pulse Test: Pulse Width = 300 ms max, Duty Cycle = 2%. NTMSD3P102R2 = 25°C unless otherwise noted) J Rating = 105° 25°C unless otherwise noted) (Note 8) ...
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... Reverse Recovery Time Reverse Recovery Stored Charge 9. Handling precautions to protect against electrostatic discharge are mandatory. 10. Indicates Pulse Test: Pulse Width = 300 ms max, Duty Cycle = 2%. 11. Switching characteristics are independent of operating junction temperature. NTMSD3P102R2 (T = 25°C unless otherwise noted) (Note 9) J Symbol ...
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... DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS Figure 1. On-Region Characteristics 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0. GATE-TO-SOURCE VOLTAGE (VOLTS) GS Figure 3. On-Resistance vs. Gate-to-Source Voltage 1.6 1.4 1.2 1 0.8 0.6 -50 NTMSD3P102R2 - 1 25° -3 ...
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... 100 GATE RESISTANCE (W) G Figure 10. Resistive Switching Time Variation vs. Gate Resistance NTMSD3P102R2 V DS 1200 C iss 1000 800 C rss 600 400 200 T = 25° GATE-TO-SOURCE OR DRAIN-TO-SOURCE ...
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... TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS 125°C J 1.0 85°C 25°C - 40° C 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0 INSTANTANEOUS FORWARD VOLTAGE (VOLTS) F Figure 14. Typical Forward Voltage NTMSD3P102R2 di/ TIME 0. Normalized Steady State (1″ pad) qJA Chip Junction 2.32 W 18.5 W 50.9 W 0.0014 F 0.0073 F 0.022 F ...
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... T = 125°C J 1E-3 85°C 1E-4 1E-5 25°C 1E-6 1E REVERSE VOLTAGE (VOLTS) R Figure 16. Typical Reverse Current 1000 TYPICAL CAPACITANCE 170 pF 100 REVERSE VOLTAGE (VOLTS) R Figure 18. Typical Capacitance NTMSD3P102R2 1E-1 1E-2 1E-3 1E-4 1E Figure 17. Maximum Reverse Current 1.6 1.4 SQUARE WAVE 1.2 1 0 ...
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... TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS 0.7 0.6 0.5 0 0.3 0.2 0 AVERAGE FORWARD CURRENT (AMPS) O Figure 20. Forward Power Dissipation 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 1.0E-05 1.0E-04 1.0E-03 Figure 21. Schottky Thermal Response NTMSD3P102R2 dc SQUARE WAVE = 5 0.5 1.0 1.5 NORMALIZED TO R 0.0031 W 0.0154 W CHIP JUNCTION 0.0014 F 0.0082 F 1.0E-02 1.0E-01 1.0E+00 t, TIME (s) http://onsemi.com 8 2.0 AT STEADY STATE (1″ ...
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... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com NTMSD3P102R2 PACKAGE DIMENSIONS SO-8 NB CASE 751-07 ISSUE AH 0.25 (0.010 ...