ntms5p02 ON Semiconductor, ntms5p02 Datasheet

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ntms5p02

Manufacturer Part Number
ntms5p02
Description
Power Mosfet -20 V, -5.4 A, Single P-channel So-8
Manufacturer
ON Semiconductor
Datasheet

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NTMS5P02R2
Power MOSFET
−5.4 Amps, −20 Volts
P−Channel Enhancement−Mode
Single SOIC−8 Package
Features
Applications
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 2
Providing Higher Efficiency
Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones
High Density Power MOSFET with Ultra Low R
Miniature SOIC−8 Surface Mount Package − Saves Board Space
Diode Exhibits High Speed with Soft Recovery
I
Drain−to−Source Avalanche Energy Specified
Mounting Information for the SOIC−8 Package is Provided
Pb−Free Package is Available
Power Management in Portable and Battery−Powered Products, i.e.:
DSS
Specified at Elevated Temperature
DS(on)
1
†For information on tape and reel specifications,
NTMS5P02R2
NTMS5P02R2G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D
−20 V
CASE 751
STYLE 13
(Note: Microdot may be in either location)
V
8
Device
SOIC−8
DSS
E5P02 = Specific Device Code
x
A
Y
WW
G
ORDERING INFORMATION
1
G
http://onsemi.com
Single P−Channel
26 mW @ −4.5 V
= Blank or S
= Assembly Location
= Year
= Work Week
= Pb−Free Package
R
(Pb−Free)
Package
DS(ON)
SOIC−8
SOIC−8
MARKING DIAGRAM &
PIN ASSIGNMENT
D
Publication Order Number:
8
1
NC S
TYP
D
S
AYWW G
E5P02x
D
2500/Tape & Reel
2500/Tape & Reel
G
NTMS5P02R2/D
Shipping
D D
S G
I
−5.4 A
D
MAX

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ntms5p02 Summary of contents

Page 1

... Single P−Channel D S MARKING DIAGRAM & PIN ASSIGNMENT E5P02x AYWW Blank Assembly Location = Year = Work Week = Pb−Free Package † Package Shipping SOIC−8 2500/Tape & Reel SOIC−8 2500/Tape & Reel (Pb−Free) Publication Order Number: NTMS5P02R2/D ...

Page 2

MAXIMUM RATINGS (T = 25°C unless otherwise noted) J Drain−to−Source Voltage Drain−to−Gate Voltage (R = 1.0 mW) GS Gate−to−Source Voltage − Continuous Thermal Resistance − Junction−to−Ambient (Note 1) Total Power Dissipation @ T = 25°C A Continuous Drain Current @ ...

Page 3

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage ( Vdc −250 mAdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (V = −16 Vdc Vdc 25° ...

Page 4

V −2.3 V −4 −3.7 V −3 −2 −2 0.25 0.5 0.75 1 1.25 −V , DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0.08 0.06 ...

Page 5

4000 C iss 3000 C rss 2000 1000 C rss −V − GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 1000 V ...

Page 6

TYPICAL ELECTRICAL CHARACTERISTICS 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 1.0E−05 1.0E−04 1.0E−03 Normalized to qja at 10s. Chip 0.0163 W 0.0652 W 0.0307 F 0.1668 F 1.0E−02 1.0E−01 1.0E+00 t, TIME ...

Page 7

... 0.25 0.50 0.010 0.020 S 5.80 6.20 0.228 0.244 STYLE 13: PIN 1. N.C. 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN 4.0 1.270 0.050 mm inches ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NTMS5P02R2 ...

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