mlp2n06cl ON Semiconductor, mlp2n06cl Datasheet

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mlp2n06cl

Manufacturer Part Number
mlp2n06cl
Description
Smartdiscretes Mosfet 2 Amps, 62 Volts, Logic Level
Manufacturer
ON Semiconductor
Datasheet

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Part Number:
mlp2n06clG
Manufacturer:
MOT/ON
Quantity:
12 500
MLP2N06CL
SMARTDISCRETESt MOSFET
2 Amps, 62 Volts, Logic Level
N−Channel TO−220
circuit protection, integrated Gate−Source clamping for ESD
protection and integral Gate−Drain clamping for over−voltage
protection and Sensefet technology for low on−resistance. No
additional gate series resistance is required when interfacing to the
output of a MCU, but a 40 kW gate pulldown resistor is recommended
to avoid a floating gate condition.
to be applied without use of external transient suppression
components. The Gate−Source clamp protects the MOSFET input
from electrostatic voltage stress up to 2.0 kV. The Gate−Drain clamp
protects the MOSFET drain from the avalanche stress that occurs with
inductive loads. Their unique design provides voltage clamping that is
essentially independent of operating temperature.
Features
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 2
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DRAIN−TO−SOURCE AVALANCHE CHARACTERISTICS
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
Gate−to−Source Voltage − Continuous
Drain Current − Continuous @ T
Total Power Dissipation @ T
Electrostatic Voltage
Operating and Storage Junction
Temperature Range
Maximum Junction Temperature
Thermal Resistance, Junction−to−Case
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 5 seconds
Single Pulse Drain−to−Source Avalanche
Energy (Starting T
L = 40 mH)
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
This logic level power MOSFET features current limiting for short
The internal Gate−Source and Gate−Drain clamps allow the device
Pb−Free Package is Available*
Rating
J
= 25°C, I
(T
GS
J
= 25°C unless otherwise noted)
C
D
= 1.0 MW)
Preferred Device
= 25°C
= 2.0 A,
C
= 25°C
Symbol
T
T
V
V
R
ESD
J
V
J(max)
E
P
DGR
, T
DSS
T
I
qJC
GS
AS
D
D
L
stg
Self−Limited
–50 to 150
Clamped
Clamped
Value
3.12
±10
150
260
2.0
40
80
1
_C/W
Unit
Vdc
Vdc
Vdc
Adc
mJ
kV
_C
_C
_C
W
Preferred devices are recommended choices for future use
and best overall value.
MLP2N06CL
MLP2N06CLG
1
2
Device
A
Y
WW
G
3
62 VOLTS (Clamped)
ORDERING INFORMATION
G
4
= Location Code
= Year
= Work Week
= Pb−Free Package
AND PIN ASSIGNMENT
R
MARKING DIAGRAM
CASE 221A
DS(on)
TO−220AB
http://onsemi.com
STYLE 5
2 AMPERES
TO−220AB
TO−220AB
N−Channel
(Pb−Free)
Package
R1
= 400 mW
Publication Order Number:
Gate
1
MLP2N06CLG
AYWW
D
S
Drain
Drain
50 Units / Rail
50 Units / Rail
MLP2N06CL/D
4
2
Shipping
R2
3
Source

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mlp2n06cl Summary of contents

Page 1

... MARKING DIAGRAM AND PIN ASSIGNMENT 4 4 Drain TO−220AB CASE 221A MLP2N06CLG STYLE 5 AYWW Gate Location Code Drain Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device Package Shipping TO−220AB 50 Units / Rail TO−220AB 50 Units / Rail (Pb−Free) Publication Order Number: MLP2N06CL/D 3 Source ...

Page 2

... Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature 25° DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. Output Characteristics MLP2N06CL (T = 25°C unless otherwise noted) C Symbol V (BR)DSS ( mAdc Vdc Vdc 150° DSS ...

Page 3

... Without some form of current limiting, a shorted load can raise a device’s junction temperature beyond the maximum rated operating temperature in only a few milliseconds. Even with no heatsink, the MLP2N06CL can withstand a shorted load powered by an automotive battery ( for almost a second if its initial operating temperature is under 100° ...

Page 4

... Thermal Resistance − General Data and Its Use” provides 100 150 detailed instructions. MAXIMUM DC VOLTAGE CONSIDERATIONS The maximum drain−to−source voltage that can be continuously applied across the MLP2N06CL when current limit is a function of the power that must be dissipated. This power is determined by the maximum current limit maximum rated operating temperature (1 150° ...

Page 5

... To achieve high gate−to−drain clamp voltages, several voltage elements are strung together; the MLP2N06CL uses 8 such elements. Customarily, two voltage elements are used to provide a 14.4 V gate−to−source voltage clamp. For the ...

Page 6

... TYPICAL APPLICATIONS: INJECTOR DRIVER, SOLENOIDS, LAMPS, RELAY COILS The MLP2N06CL has been designed to allow direct interface to the output of a microcontrol unit to control an isolated load. No additional series gate resistance is required, but gate pulldown resistor is recommended to avoid a floating gate condition in the event of an MCU failure ...

Page 7

... U 0.000 0.050 0.00 1.27 V 0.045 −−− 1.15 −−− Z −−− 0.080 −−− 2.04 STYLE 5: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MLP2N06CL/D ...

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