rk4936 ROHM Co. Ltd., rk4936 Datasheet - Page 2

• Manufacturer Part Number: rk4936
• Description: Silicon N-channel Mos Fet
• Manufacturer: ROHM Co. Ltd.

Transistors
Channel to Ambient
Gate-Source Leakage
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Thermal resistance (Ta = 25 C)
Electrical characteristics (Ta = 25 C)
Body diode characteristics (Source-Drain characteristics) (Ta = 25 C)
Static Drain-Source On-State
Resistance
Pulsed
Pulsed
Parameter
Parameter
Parameter
V
Symbol
R
Symbol
V
l Y
(BR) DSS
t
Q
V
t
Q
DS(on)
C
Q
I
I
C
Q
GS(th)
C
d(on)
d(off)
t
GSS
DSS
t
t
Rth(ch-A)
SD
rr
r
f
gs
gd
fs
oss
iss
rss
g
rr
Symbol
l
Min.
Min.
1.0
30
5
Typ.
Typ.
140
140
740
420
180
2.7
5.6
22
32
40
14
30
55
25
21
Limits
62.5
Max.
Max.
1.5
2.5
10
10
28
42
52
42
Unit
Unit
m
nC
nC
nC
pF
pF
pF
nC
ns
ns
ns
ns
ns
Unit
C/W
S
V
V
V
A
A
I
I
I
I
V
I
V
V
V
V
f=1MHz
I
V
R
R
V
V
I
I
I
di/dt=100A/ s
D
D
D
D
D
D
D
s
DR
=5.2A, V
GS
DS
DS
=6A, V
=6A, V
=6A, V
=6A, V
DS
GS
GS
L
GS
DD
GS
=1mA, V
=3A, V
=6A
=5
=5.2A, V
=10V
= 20V, V
=30V, V
=10V, I
=0V
=10V
=15V
=10V
=10
GS
GS
GS
DS
DD
Test Conditions
Test Conditions
GS
GS
=10V
=10V
=4.5V
=4V
D
GS
GS
=1mA
15V
=0V
=0V
DS
=0V
=0V
=0V
RK4936