bso302sn Infineon Technologies Corporation, bso302sn Datasheet - Page 7
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bso302sn
Manufacturer Part Number
bso302sn
Description
Sipmos Small-signal-transistor
Manufacturer
Infineon Technologies Corporation
Datasheet
1.BSO302SN.pdf
(8 pages)
Data Sheet
Typ. transfer characteristics I
parameter: t
V
Forward characteristics of reverse diode
I
parameter: T
F
DS
= f ( V
10
≥ 2 x I
10
10
10
20
16
14
12
10
A
A
8
6
4
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
-1
0.0
2
1
0
BSO 302SN
SD
)
D
0.4
p
x R
j
= 80 µs
, t
0.8
p
DS(on) max
= 80 µs
1.2
T
T
T
T
j
j
j
j
= 25 ˚C typ
= 150 ˚C typ
= 25 ˚C (98%)
= 150 ˚C (98%)
1.6
2.0
D
= f ( V
2.4
V
V
V
V
GS
GS
SD
5.0
3.0
)
7
Gate threshold voltage
V
parameter : V
GS(th)
3.0
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
-60
= f ( T
-20
j
)
GS
= V
20
DS
, I
D
60
= 80 µA
BSO 302SN
100
V
T
j
05.99
160
max
typ
min