dmc2990udj Diodes, Inc., dmc2990udj Datasheet - Page 5

• Manufacturer Part Number: dmc2990udj
• Description: Complementary Pair Enhancement Mode Mosfet
• Manufacturer: Diodes, Inc.

DMC2990UDJ
Document number: DS35481 Rev. 5 - 2
1.2
1.0
0.8
0.6
0.4
0.2
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
50
40
30
20
10
0
-50
8
6
4
2
0
0
0
0
-25
T , JUNCTION TEMPERATURE( C)
V , DRAIN-SOURCE VOLTAGE (V)
J
Fig. 9 Typical Junction Capacitance
Fig. 11 Gate Charge Characteristics
DS
0.2
0
5
I = 250µA
D
25
0.4
C
C
rss
Q - (nC)
oss
G
50
10
C
0.6
75
iss
I = 1mA
D
100
V
15
DS
f = 1MHz
0.8
°
= 10V
125 150
20
1
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1,000
0.001
100
0.01
10
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
1.0
0.8
0.6
0.4
0.2
0.1
1
1
0
2
0.1
0
R
Limited
T
T = 25°C
Single Pulse
Fig. 8 Diodes Forward Voltage vs. Current
4
DS(on)
J(MAX)
A
V , DRAIN-SOURCE VOLTAGE (V)
0.2
V , SOURCE- DRAIN VOLTAGE (V)
DS
SD
Fig. 12 SOA, Safe Operation Area
V , DRAIN-SOURCE VOLTAGE
DC
P
6
= 150°C
DS
W
= 10s
P
W
0.4
8
= 1s
P
1
W
= 100ms
P
10
W
= 10ms
0.6
P
W
12
T = 25°C
A
= 1ms
T = 150°C
T =
T =
T =
14
A
A
A
A
0.8
10
DMC2990UDJ
125°C
25°C
85°C
16
P
1.0
P
W
W
© Diodes Incorporated
18
= 100µs
= 10µs
October 2011
1.2
20
100