nvd5803n ON Semiconductor, nvd5803n Datasheet - Page 3

• Manufacturer Part Number: nvd5803n
• Description: Nvd5803n Power Mosfet
• Manufacturer: ON Semiconductor

0.010
0.008
0.006
0.004
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
160
140
120
100
80
60
40
20
−55
0
0
2
Figure 3. On−Resistance vs. Gate−to−Source
V
10 V
I
−35
GS
D
Figure 5. On−Resistance Variation with
= 50 A
= 10 V
Figure 1. On−Region Characteristics
−15
V
V
DS
GS
T
J
, DRAIN−TO−SOURCE VOLTAGE (V)
1
, GATE−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
T
5
J
4
= 25°C
25
Temperature
2
45
Voltage
V
65
6
GS
= 5 V
85
3
105
TYPICAL CHARACTERISTICS
125 145 165
8
T
I
4
D
J
= 50 A
= 25°C
http://onsemi.com
4.8 V
3.6 V
4.6 V
4.0 V
3.8 V
4.4 V
4.2 V
10
5
3
100000
10000
0.008
0.007
0.006
0.005
0.004
1000
160
140
120
100
100
80
60
40
20
0
2
5
5
Figure 4. On−Resistance vs. Drain Current and
V
V
Figure 6. Drain−to−Source Leakage Current
GS
DS
T
J
= 0 V
= 25°C
≥ 10 V
10
V
V
Figure 2. Transfer Characteristics
T
DS
T
GS
20
J
J
, DRAIN−TO−SOURCE VOLTAGE (V)
= 25°C
, GATE−TO−SOURCE VOLTAGE (V)
= 125°C
3
15
I
D
, DRAIN CURRENT (A)
T
Gate Voltage
J
35
vs. Voltage
= 150°C
20
V
GS
4
T
= 5 V
J
T
J
= −55°C
V
25
= 125°C
GS
50
= 10 V
30
5
65
35
80
40
6