nvd5890n ON Semiconductor, nvd5890n Datasheet - Page 5

• Manufacturer Part Number: nvd5890n
• Description: Nvd5890n Power Mosfet
• Manufacturer: ON Semiconductor

1000
7000
6000
5000
4000
3000
2000
1000
100
10
1
0
1
0
V
V
I
D
Figure 9. Resistive Switching Time Variation
C
GS
DD
= 50 A
rss
= 10 V
= 20 V
5
V
DS
C
Figure 7. Capacitance Variation
C
iss
, DRAIN−TO−SOURCE VOLTAGE (V)
oss
10
R
G
vs. Gate Resistance
, GATE RESISTANCE (W)
15
1000
10
20
100
10
1
0.1
25
Figure 11. Maximum Rated Forward Biased
TYPICAL PERFORMANCE CURVES
V
DS
V
SINGLE PULSE
T
C
GS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
30
= 25°C
≤ 20 V
V
T
f = 1 MHz
R
THERMAL LIMIT
PACKAGE LIMIT
J
GS
DS(on)
= 25°C
Safe Operating Area
35
http://onsemi.com
= 0 V
t
t
t
d(off)
t
d(on)
r
f
1
LIMIT
40
100
5
15
14
13
12
10
11
9
8
7
6
5
4
3
2
1
0
0
100
0.1
10
1
0.3
Drain−to−Source Voltage vs. Total Charge
Q
10
Figure 10. Diode Forward Voltage vs. Current
GS
10
0.4
Figure 8. Gate−to−Source and
T
V
Q
J
20
SD
g
= 150°C
100°C
, TOTAL GATE CHARGE (nC)
0.5
, SOURCE−TO−DRAIN VOLTAGE (V)
V
Q
DS
100 ms
10 ms
10 ms
1 ms
dc
DS
30
0.6
100
Q
40
T
25°C
0.7
0.8
50
T
J
0.9
= −55°C
60
V
GS
V
I
T
D
J
DS
= 50 A
= 25°C
1.0
= 15 V
70
1.1
80
20
15
10
5
0
1.2