dmp2018lfk Diodes, Inc., dmp2018lfk Datasheet - Page 4

• Manufacturer Part Number: dmp2018lfk
• Description: P-channel Enhancement Mode Mosfet
• Manufacturer: Diodes, Inc.

DMP2018LFK
Document number: DS35357 Rev. 3 - 2
10,000
1,000
1.4
1.2
1.0
0.8
0.6
0.4
0.2
10
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
100
8
6
4
2
0
0
-50 -25
0
0
20
T , AMBIENT TEMPERATURE (°C)
Fig. 11 Gate-Charge Characteristics
-V , DRAIN-SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
A
g
DS
Fig. 9 Typical Total Capacitance
0
C
C
C
oss
rss
5
iss
40
25
V
I = -7.2A
DS
D
I = -1mA
D
= -16V
60
50
10
I = -250µA
D
75
80
100
15
100
125 150
f = 1MHz
120
20
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100,000
10,000
0.01
100
1,000
0.1
10
30
25
20
15
10
100
5
0
1
10
0.1
0.2
1
0
R
Limited
T
T = 25°C
Single Pulse
P
DS(on)
J(max)
A
W
DC
Fig. 8 Diode Forward Voltage vs. Current
P = 1s
= 10s
V , DRAIN-SOURCE VOLTAGE (V)
W
= 150°C
-V , SOURCE-DRAIN VOLTAGE (V)
DS
P = 100ms
0.4
SD
-V , DRAIN-SOURCE VOLTAGE (V)
W
4
DS
Fig. 10 Typical Leakage Current
Fig. 12 Safe Operation Area
P
W
vs. Drain-Source Voltage
1
= 10ms
P
W
0.6
= 1ms
P
W
8
= 100µs
P
W
T = 25°C
A
= 10 s
0.8
µ
12
10
DMP2018LFK
T = 150°C
T = 125°C
A
A
T = 85°C
T = 25°C
1.0
A
A
16
© Diodes Incorporated
August 2011
100
1.2
20