dmp210dudj Diodes, Inc., dmp210dudj Datasheet - Page 4

• Manufacturer Part Number: dmp210dudj
• Description: Dual P-channel Enhancement Mode Mosfet
• Manufacturer: Diodes, Inc.

Typical Characteristics
DMP210DUDJ
Document number: DS31494 Rev. 4 - 2
100
1.4
1.2
0.8
0.6
0.4
0.2
10
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
1
0
-50
1
0
-25
0.001
0.01
T , JUNCTION TEMPERATURE ( C)
V
0.1
Fig. 9 Typical Junction Capacitance
J
DS
0.00001
1
4
, DRAIN-SOURCE VOLTAGE (V)
0
r(t) @ D=0.005
r(t) @ D=0.05
r(t) @ D=0.7
r(t) @ D=0.02
r(t) @ D=0.1
r(t) @ D=Single Puls e
r(t) @ D=0.5
r(t) @ D=0.3
r(t) @ D=0.01
25
8
0.0001
50
r(t) @ D=0.9
V
(th)
12
(V) @ I = 250 A
V
75
(th)
(V) @ I = 1mA
0.001
D
100
C
f=1MHz
C
C
RSS
D
16
ISS
OSS
°
μ
125 150
Ave(pF )
Ave(pF)
Av e(pF)
Fig. 11 Transient Thermal Resistance
0.01
t1, Pulse Duration Time (sec)
20
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0.1
10000
1000
100
0.1
0.6
0.5
0.4
0.3
0.2
0.1
10
1
0
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
0
0
1
2
Fig. 8 Diode Forward Voltage vs. Current
0.2
V
V
SD
4
DS
, SOURCE-DRAIN VOLTAGE (V)
, DRAIN-SOURCE VOLTAGE(V)
10
6
0.4
Rthja (t)=r(t) *R thja
Rthja=369C/W
Duty Cycle, D=t1/t2
8
10
0.6
100
I
DSS
V
T =25 C
A
SD
12
(nA) Ave @ 150 C
(V) @ V
I
DSS
I
°
DSS
I
DSS
0.8
I
DSS
DMP210DUDJ
14
(nA) Ave @ 125 C
(nA) Ave @ 85 C
(nA) Ave @ -55 C
(nA) Ave @ 25 C
GS
1000
=0V
16
© Diodes Incorporated
°
1
18
°
°
°
°
June 2010
20
1.2