dmp21d0ufb Diodes, Inc., dmp21d0ufb Datasheet - Page 3

• Manufacturer Part Number: dmp21d0ufb
• Description: 20v P-channel Enhancement Mode Mosfet
• Manufacturer: Diodes, Inc.

Electrical Characteristics
Typical Characteristics
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
DMP21D0UFB
D
atasheet Number: DS35277 Rev. 1 - 2
4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
6. Device mounted on minimum recommended pad layout test board, 10 s pulse duty cycle = 1%.
7. Short duration pulse test used to minimize self-heating effect.
2.0
1.5
1.0
0.5
0
0
-V , DRAIN-SOURCE VOLTAGE (V)
Characteristic
Fig. 3 Typical Output Characteristic
V
DS
1
GS
V
V
GS
= -2.5V
GS
V
= -3.0V
GS
= -4.0V
= -4.5V
2
J
= 25°C
@T
A
3
= 25°C unless otherwise specified
V
V
V
V
GS
GS
GS
GS
= -2.0V
= -1.8V
= -1.5V
= -1.2V
4
Symbol
R
BV
V
5
www.diodes.com
DS (ON)
t
t
I
I
C
|Y
V
C
GS(th)
C
Q
Q
D(on)
D(off)
DSS
GSS
R
Q
Q
oss
t
t
SD
rss
DSS
iss
gs
gd
r
fs
f
g
g
g
|
3 of 6
Min
20
50
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.0
1.5
1.0
0.5
599.2
15.5
10.4
1.54
0.91
0.14
0.24
49.2
34.5
Typ
-0.7
6.7
9.2
0
80
-
-
-
-
-
-
0
V
DS
0.5
Max
-V
Fig. 4 Typical Transfer Characteristic
400
600
900
-1.2
±10
= -5V
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Diodes Incorporated
GS
T = 125°C
A
T = 150°C
, GATE-SOURCE VOLTAGE (V)
A
A Product Line of
1.0
Unit
mΩ
mS
nC
nC
nC
nC
μA
μA
pF
pF
pF
Ω
ns
ns
ns
ns
V
V
V
T = -55°C
A
1.5
T = 25°C
A
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
V
V
I
V
V
T = 85°C
D
A
GS
DS
GS
DS
GS
GS
GS
DS
GS
DS
DS
GS
GS
DS
GS
= -1A
= 0V, I
= -20V, V
= ±8V, V
= V
= -4.5V, I
= -2.5V, I
= -1.8V, I
= -3V, I
= 0V, I
= -10V, V
= 0V, V
= -8V,V
= -4.5V, V
= -10V, -I
= -4.5V, R
2.0
GS
Test Condition
DMP21D0UFB
, I
D
S
D
GS
D
DS
= -300mA
= -250μA
DS
= -10mA
D
D
D
D
GS
GS
= -250μA
DS
2.5
G
= 0V, f = 1MHz
= -15V,I
= -400mA
= -300mA
= -100mA
= 1A
= 0V
© Diodes Incorporated
= 6Ω
= 0V
= 0V,
= -15V,
3.0
D
May 2011
= -1A