dmp22d6ut Diodes, Inc., dmp22d6ut Datasheet

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dmp22d6ut

Manufacturer Part Number
dmp22d6ut
Description
P-channel Enhancement Mode Mosfet
Manufacturer
Diodes, Inc.
Datasheet

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Maximum Ratings
Thermal Characteristics
Electrical Characteristics
Features
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current (Note 3)
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes:
DMP22D6UT
Document number: DS31585 Rev. 2 - 2
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
ESD Protected Gate
"Green" Device (Note 4)
Qualified to AEC-Q101 standards for High Reliability
1.
2.
3.
4.
5.
Device mounted on FR-4 PCB.
No purposefully added lead.
Pulse width ≤10μS, Duty Cycle ≤1%
Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Short duration pulse test used to minimize self-heating effect.
Characteristic
Characteristic
Characteristic
ESD PROTECTED
@T
A
= 25°C unless otherwise specified
Steady
State
@T
@T
A
A
= 25°C unless otherwise specified
= 25°C unless otherwise specified
T
T
A
A
Symbol
R
= 25°C
= 85°C
BV
V
DS (ON)
I
C
I
|Y
V
C
C
GS(th)
DSS
GSS
TOP VIEW
oss
SD
rss
DSS
iss
fs
|
www.diodes.com
Min
-0.5
200
-20
SOT-523
1 of 4
Symbol
Symbol
T
V
V
J,
R
I
P
Mechanical Data
DSS
GSS
I
DM
T
θ JA
D
D
STG
Typ
0.7
1.1
1.7
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Case: SOT-523
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish - Matte Tin annealed over Alloy 42 Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.002 grams (approximate)
Gate
Equivalent Circuit
P-CHANNEL ENHANCEMENT MODE MOSFET
Gate
Protection
Diode
Max
±1.0
-1.0
-1.0
-1.4
175
1.1
1.6
2.6
30
20
Drain
Source
-55 to +150
Value
Value
-430
-310
-750
150
833
-20
±8
Unit
μA
ms
μA
pF
pF
pF
V
V
Ω
V
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
G
TOP VIEW
GS
DS
GS
DS
GS
GS
GS
DS
GS
DS
= 0V, I
= 0V, I
= -20V, V
= V
= -4.5V, I
=10V, I
= -16V, V
= ±4.5V, V
= -2.5V, I
= -1.8V, I
D
GS
Test Condition
DMP22D6UT
S
, I
S
D
D
D
= -115mA
= -250mA
= 0.2A
D
GS
D
D
= -250μA
GS
DS
= -430mA
= -300mA
= -150mA
© Diodes Incorporated
Units
Units
°C/W
mW
= 0V
November 2008
= 0V
mA
mA
°C
V
V
= 0V

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dmp22d6ut Summary of contents

Page 1

... R DS (ON) 1.7 ⎯ 200 | ⎯ ⎯ ⎯ ⎯ C iss ⎯ ⎯ C oss ⎯ ⎯ C rss www.diodes.com DMP22D6UT Drain Source TOP VIEW Value Units -20 V ±8 V -430 mA -310 -750 mA Value Units 150 mW 833 °C/W -55 to +150 °C Max Unit Test Condition ⎯ ...

Page 2

... Drain Current DMP22D6UT Document number: DS31585 Rev GATE-SOURCE VOLTAGE (V) GS Fig. 2 Typical Transfer Characteristics -I , DRAIN-SOURCE CURRENT (A) D Fig. 4 Static Drain-Source On-Resistance vs. Drain Current -I , DRAIN-SOURCE CURRENT (A) D Fig. 6 Static Drain-Source On-Resistance vs. Drain-Source Current www.diodes.com DMP22D6UT 10 November 2008 © Diodes Incorporated ...

Page 3

... Y = Year (ex 2008 Month (ex September) 2010 2011 2012 X Y Mar Apr May Jun Jul www.diodes.com DMP22D6UT -V , SOURCE-DRAIN VOLTAGE ( DRAIN-SOURCE VOLTAGE (V) DS Fig. 10 Typical Capacitance Packaging 3000/Tape & Reel 2013 2014 Aug Sep Oct Nov 8 9 ...

Page 4

... President of Diodes Incorporated. DMP22D6UT Document number: DS31585 Rev Dim α All Dimensions in mm Dimensions Value (in mm IMPORTANT NOTICE LIFE SUPPORT www.diodes.com DMP22D6UT SOT-523 Min Max Typ 0.15 0.30 0.22 0.75 0.85 0.80 1.45 1.75 1.60 ⎯ ⎯ 0.50 0.90 1.10 1.00 1.50 1.70 1.60 0.00 0.10 0.05 0.60 0.80 0.75 0.10 0.30 0.22 0.10 ...

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