tsm9966dcx6 Taiwan Semiconductor Company, Ltd. (TSC), tsm9966dcx6 Datasheet
tsm9966dcx6
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tsm9966dcx6 Summary of contents
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... High Density Cell Design for Ultra Low On-resistance Application ● Specially Designed for Li-on Battery Packs ● Battery Switch Application Ordering Information Part No. Package TSM9966DCX6 RF SOT-26 Absolute Maximum Rating Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) ...
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Electrical Specifications ( Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain ...
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Electrical Characteristics Curve Output Characteristics On-Resistance vs. Drain Current On-Resistance vs. Junction Temperature 20V Dual N-Channel MOSFET o ( unless otherwise noted) Source-Drain Diode Forward Voltage 3/6 TSM9966D Transfer Characteristics Gate Charge Version: A07 ...
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Electrical Characteristics Curve On-Resistance vs. Gate-Source Voltage Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient 20V Dual N-Channel MOSFET o ( unless otherwise noted) 4/6 TSM9966D Threshold Voltage Version: A07 ...
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Marking Diagram SOT-26 Mechanical Drawing DIM Device Code Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, ...
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Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No ...