tsm5ns50 Taiwan Semiconductor Company, Ltd. (TSC), tsm5ns50 Datasheet

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tsm5ns50

Manufacturer Part Number
tsm5ns50
Description
500v N-channel Power Mosfet
Manufacturer
Taiwan Semiconductor Company, Ltd. (TSC)
Datasheet
Features



Application



Ordering Information
Absolute Maximum Rating
Thermal Performance
Notes:
a. When mounted on 1 inch square 2oz copper clad FR-4
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Repetitive Avalanche Current
Energy Avalanche
Maximum Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
TSM5NS50CP RO
Low R
Low Gate Charge
Unclamped Inductive Switching (UIS) Rated
Load Switch
Ballast
Lighting
Part No.
DS(on)
TO-252
Package
Pin Definition:
1. Gate
2. Drain
3. Source
TO-252
(Ta = 25
Packing
T&R
o
C unless otherwise noted)
Ta = 25
o
C
1/6
PRODUCT SUMMARY
V
DS
500V N-Channel Power MOSFET
500
Symbol
Symbol
(V)
T
R
R
J
EAS
V
V
, T
I
I
P
T
I
DM
AR
DS
GS
D
D
J
JC
JA
STG
N-Channel MOSFET
0.8 @ V
Block Diagram
R
DS(on)
-55 to +150
GS
Limit
Limit
+150
1.78
150
500
±20
()
4.4
20
70
62
= 10V
5
TSM5NS50
Version: A07
I
D
o
o
Unit
Unit
4
(A)
C/W
C/W
mJ
o
o
W
V
V
A
A
A
C
C

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tsm5ns50 Summary of contents

Page 1

... Unclamped Inductive Switching (UIS) Rated Application  Load Switch  Ballast  Lighting Ordering Information Part No. Package TSM5NS50CP RO TO-252 Absolute Maximum Rating Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Repetitive Avalanche Current Energy Avalanche Maximum Power Dissipation Operating Junction Temperature ...

Page 2

... 10V 4. 4.4A 520V 4.4A 10V 25V 0V 1.0MHz V = 10V 4.4A 350V 25 4.4A, S di/dt = 100A/uS 2/6 TSM5NS50 Min Typ Max 500 -- -- DSS GS(TH ±100 GSS 1.0 DSS -- 0.7 0.8 DS(ON 1.0 1 ...

Page 3

... Electrical Characteristics Curve Output Characteristics On-Resistance vs. Drain Current On-Resistance vs. Junction Temperature 500V N-Channel Power MOSFET o ( unless otherwise noted) Source-Drain Diode Forward Voltage 3/6 TSM5NS50 Transfer Characteristics Gate Charge Version: A07 ...

Page 4

... Electrical Characteristics Curve On-Resistance vs. Gate-Source Voltage Maximum Safe Operating Area Normalized Thermal Transient Impedance, Junction-to-Ambient 500V N-Channel Power MOSFET o ( unless otherwise noted) 4/6 TSM5NS50 Threshold Voltage Version: A07 ...

Page 5

... N-Channel Power MOSFET SOT-252 Mechanical Drawing DIM 5/6 TSM5NS50 TO-252 DIMENSION MILLIMETERS INCHES MIN MAX MIN A 2.3BSC 0.09BSC A1 4.6BSC 0.18BSC B 6.80 7.20 0.268 C 5.40 5.60 0.213 D 6.40 6.65 0.252 E 2.20 2.40 0.087 F 0.00 0.20 0.000 G 5.20 5.40 0.205 G1 0.75 0.85 0.030 G2 0.55 0.65 0.022 H 0.35 0.65 0.014 I 0.90 1.50 0.035 J 2.20 2.80 0.087 K 0.50 1.10 0.020 L 0.90 1.50 0.035 M 1.30 1.70 0.051 MAX 0.283 0.220 0.262 0.094 0.008 0.213 ...

Page 6

... The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 500V N-Channel Power MOSFET Notice 6/6 TSM5NS50 Version: A07 ...

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